한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.907-910
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- 2008
Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs
- Fortunato, G. (IMM-CNR) ;
- Valletta, A. (IMM-CNR) ;
- Gaucci, P. (IMM-CNR) ;
- Mariucci, L. (IMM-CNR) ;
- Cuscuna, M. (IMM-CNR) ;
- Maiolo, L. (IMM-CNR) ;
- Pecora, A. (IMM-CNR)
- Published : 2008.10.13
Abstract
The effect of channel length reduction on the electrical characteristics of self-aligned polysilicon TFTs has been investigated by combining experimental characteristics and 2-D numerical simulations. The role of drain induced barrier lowering and floating body effects has been carefully analized using numerical simulations.