• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.56-65
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• 2001

This paper proposes an algorithm for the capacitance extraction of general 3-dimensional conductors in an ideal uniform dielectric that uses a high-order quadrature approximation method combined with the typical first-order collocation method to enhance the accuracy and adopts an efficient matrix-vector product algorithm for the model-order reduction to achieve efficiency. The proposed method enhances the accuracy using the quadrature method for interconnects containing corners and vias that concentrate the charge density. It also achieves the efficiency by reducing the model order using the fact that large parts of system matrices are of numerically low rank. This technique combines an SVD-based algorithm for the compression of rank-deficient matrices and Gram-Schmidt algorithm of a Krylov-subspace iterative technique for the rapid multiplication of matrices. It is shown through the performance evaluation procedure that the combination of these two techniques leads to a more efficient algorithm than Gaussian elimination or other standard iterative schemes within a given error tolerance.

• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.371-376
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• 2017

In this paper, we propose a magnetic resonant WPT(wireless power transfer) scenario using a large coil resonating at 6.78 MHz, and compare the characteristics through a three-dimensional electromagnetic field simulation and a magnetic resonant WPT equivalent circuit. The magnetic resonant WPT equivalent circuit proposed in this paper considers the parasitic capacitance generated between the coils in addition to the conventional equivalent circuit. Based on this analysis, we fabricated the magnetic resonant WPT coil and compared it with simulation prediction. As a result of comparison, the transfer characteristics and the resonance frequency shift can be predicted. Error proposed characteristics of equivalent circuit for the magnetic resonant WPT and the measured values are estimated to be ${\Delta}{\mid}S11{\mid}=1.31dB$ and ${\Delta}{\mid}S21{\mid}=1.21dB$, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.44-53
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• 1999

This paper are reported a methodology and application for extracting parasitic capacitances in a multi-level interconnect semiconductor structure by a numerical technique. To calculate the parasitic capacitances between the interconnect lines, we employed finite element method (FEM) and calculated the distrubution of electric potential in the inter-metal layer dielecric(ILD) by solving the Laplace equation. The three-dimensional multi-level interconnect structure is generated directly from two-dimensional mask layout data by specifying process sequences and dimension. An exemplary structure comprising two metal lines with a dimension of 8.0$\times$8.0$\times$5.0$\mu\textrm{m}^3/TEX>, which is embedded in three dielectric layer, was simulated to extract the parasitic capacitances. In this calculation, 1960 nodes with 8892 tetrahedra were used in ULTRA SPARC 1 workstation. The total CPU time for the simulation was 28 seconds, while the memory size of 4.4MB was required.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.9
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• pp.47-53
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• 2011

The signal transmission properties of the connector such as insertion loss and return loss are investigated using analysis procedure of S-parameter simulation, equivalent model extraction, and characteristic impedance calculation. S-parameter simulation is performed by connector's modeling and solving based on 3-dimensional finite element method. The connector's equivalent model of ${\pi}$ type is are proposed and extracted with an optimization process of circuit analysis simulator. The characteristic impedance of the connector is calculated with results of circuit analysis simulation and S-parameter data. According to the connector's characteristic impedance, it's revised design is carried out. In this work, the connector's effective contact area is increased and its body is applied as a high dielectric material in order to increase its capacitance and then obtain impedance matching. Therefore, return loss of the connector is improved by approximately 10 dB due to its design revision.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.2
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• pp.73-78
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• 2020

In this study, a novel reactive power control scheme is proposed to supply stable reactive power to the distribution line by compensating a ripple voltage of DC link. In a single-phase system, a magnitude of second harmonic is inevitably generated in the DC link voltage, and this phenomenon is further increased when the capacity of DC link capacitor decreases. Reactive power control was performed by controlling the d-axis current in the virtual synchronous reference frame, and the voltage control for maintaining the DC link voltage was implemented through the q-axis current control. The proposed method for compensating the ripple voltage was classified into three parts, which consist of the extraction unit of DC link voltage, high pass filter (HPF), and time delay unit. HPF removes an offset component of DC link voltage extracted from integral, and a time delay unit compensates the phase leading effect due to the HPF. The compensated DC voltage is used as feedback component of voltage control loop to supply stable reactive power. The performance of the proposed algorithm was verified through simulation and experiments. At DC link capacitance of 375 uF, the magnitude of ripple voltage decreased to 8 Vpp from 74 Vpp in the voltage control loop, and the total harmonic distortion of the current was improved.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.56-61
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• 2015

Ideal and stretch-out C-V curve were shown at high frequency using SiGe p-FinFET simulation. Average interface trap density can be extracted by the difference of voltage axis on ideal and stretch-out C-V curve. Also, interface trap density(Dit) was extracted by Terman's method that uses the same stretch-out of C-V curve with interface trap characteristic, and average interface trap density was calculated at same energy level. Comparing the average interface trap density, which was found by method using difference of voltage, with Terman's method, it was verified that the two methods almost had the same average interface trap density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Korean Journal of Acupuncture
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• v.31 no.2
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• pp.66-78
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• 2014

Objectives : The specificity of acupuncture point has been a highly controversial subject. Existing researches said that ion-distribution differences are observed on the acupuncture point. This study was conducted under the assumption that multiple ionic changes induced by muscle fatigue would be different between the acupuncture point with non-acupuncture point. Methods : To induce the identical fatigue, twenty subjects performed the knee extension/flexion exercise using the Biodex System 3. ST32 and ST33 as well as adjacent non-acupuncture points were selected. We measured blood lactate and analyzed the median frequency(MF) and peak torque. To obtain the information on the extracellular fluid(ECW), intracellular fluid(ICW) and cell membrane indirectly, we used the multi-frequency bioelectrical impedance analysis(MF-BIA) method. Results : MF, peak torque and blood lactate level of all measurement sites were gradually returned to normal. Re resistance of ST32 had a stronger response, but a non-acupuncture point adjacent to ST33 had a larger response up to 20 minutes post exercise. Ri resistances were similar for both acupoints and non-acupoints. The $C_m$ capacitance of ST32 had a stronger response after inducing fatigue, but ST33 had a smaller response than a non-acupuncture point adjacent to it. Conclusions : In comparison with before and after inducing fatigue, the specificity of acupuncture points was not clearly observed. Hence, we concluded that the body composition factors extraction method had the limitation as a method of finding the specificity of acupuncture points by inducing fatigue.