• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.9-12
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• 1994

Epoxy-Ceramic Composite have good insulating, therma1 and mechanical properties, so it is studied actively on this material. In this thesis, we made a composite material b)\ulcorner filling Epoxy Resin with ceramics treated with Sillane Coupling Agent and studied dielectric and insulating characteristics according to treatment density of Sillane Coupling Agent and weight percent of filler. As a result, loss tangent increase and electrical breakdown voltage decrease according to increasing treatment density of sillane coupling agent because Interface matching between matrix and filler is not good. The best treatment density of sillane coupling agent is 0.5% water solution, in this density the best interface matching is achieved so good dielectric and insulation characteristics are shown. Dielectric and insulation characteristics according to weight percent of filler are best at 25wt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.102-103
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• 2007

The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1315-1316
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• 2007

This is paper, a new structure to effectively improve the Vce(sat) voltage and latch-up current in NPT type IGBTs with hole barrier layer and diverter. The hole barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n-layer. And the diverter significantly reduce hole current from flowing into the p-layer and improve latch up current. Analysis on the Breakdown voltage shows identical values compared to existing Conventional IGBT structures. This shows an improvement on Vce(sat) and Latct-up current without lowering other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.361-364
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• 2004

Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance($R_{ON}$) of the proposed LDMOS is $10.36\Omega-cm$ and breakdown voltage is 205V when $L_{dr}=7{\mu}m$ with step doped surface.

• The Journal of Engineering Research
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• v.6 no.2
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Molecules and Cells
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• v.39 no.1
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• pp.26-30
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• 2016

Peroxiredoxins are ubiquitous thiol proteins that catalyse the breakdown of peroxides and regulate redox activity in the cell. Kinetic analysis of their reactions is required in order to identify substrate preferences, to understand how molecular structure affects activity and to establish their physiological functions. Various approaches can be taken, including the measurement of rates of individual steps in the reaction pathway by stopped flow or competitive kinetics, classical enzymatic analysis and measurement of peroxidase activity. Each methodology has its strengths and they can often give complementary information. However, it is important to understand the experimental conditions of the assay so as to interpret correctly what parameter is being measured. This brief review discusses different kinetic approaches and the information that can be obtained from them.

• Bulletin of the Korean Chemical Society
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• v.21 no.1
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• pp.69-74
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• 2000

Applicability of Thermal field flow fractionation (ThFFF) was investigated for the analysis of masticated natural rubber (NR) adhesives produced bya hot melt mastication process. An optimum ThFFF condition for NR analysis was found by using tetrahydrofuran (THF) as a solvent/carrier and a field-programming. Low flowrate (0.3 mL/min) was used to avoid stopping the flow for the sample relaxation. Measured molecular weight distribution was used to monitor degradation of rubber during the mastication process. Rubber samples collected at three different stages of the mastication process and were analyzed by ThFFF. It was found that in an anaerobic process rubber degradation occurs at the resin-mixing (compounding) zone as well as in the initial break-down zone, while in an aerobic process most of degradation occurs at the initial breakdown zone. It was also found that E-beam radiation on NR causes a slight increase in the NR molecular weight due to the formation of a branched structure.

• Bulletin of the Korean Chemical Society
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• v.20 no.12
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• pp.1418-1420
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• 1999

Kinetics and mechanism of the aminolysis of Z-thiophenyl acetates with X-benzylamines are investigated in acetonitrile at 45.0 ℃. The magnitudes of Bronsted coefficients β$_x$ (=1.3~-1.6) and β$_z$ (= -2.1~-2.4) are all large and cross-interaction constant ρxz is relatively large and positive (0.90). These trends are consistent with the rate-limiting breakdown of a tetrahedral intermediate, $T^±$. The proposed mechanism is also supported by adherence of the rate data to the reactivity-selectivity principle (RSP). The kinetic isotope effects, $k_H/k_D$, are greater than unity (1.3-1.4) suggesting a possibility of hydrogen-bonded four-centered transition state. The activation parameters, ΔH$^≠$ and ΔS$^≠$, are consistent with this transition-state structure.