Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
- /
- Pages.102-103
- /
- 2007
Electrical Characteristics of High-Power LIGBT Devices Implemented by CMOS Process
CMOS 공정으로 구현한 고 전력 LIGBT 소자의 전기적 특성
- Lee, Ju-Wook (Dept. of IT Convergence & Component Lab., ETRI) ;
-
Park, Hoon-Soo
(Dept of Semiconductor Eng., Uiduk University)
;
-
Koo, Jin-Gun
(Dept. of IT Convergence & Component Lab., ETRI)
;
-
Kang, Jin-Yeong
(Dept. of IT Convergence & Component Lab., ETRI)
- 이주욱 (한국전자통신연구원 IT 융합부품 연구소) ;
-
박훈수
(위덕대학교 반도체전자공학부)
;
-
구진근
(한국전자통신연구원 IT 융합부품 연구소)
;
-
강진영
(한국전자통신연구원 IT 융합부품 연구소)
- Published : 2007.06.21
Abstract
The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.