• Title/Summary/Keyword: bias effect

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A Hybrid Ring Coupled Varactor Reflection-type Analog Phase Shifter using an Inductor for Extending a Change in the Phase (위상확장용 인턱터를 사용한 하이브리드 링 결합 바랙터 반사형 아나로그 이상기)

  • 고성선;임계재;윤현보
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.15 no.1
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    • pp.71-79
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    • 1990
  • An analog phase shifter is designed at the operating frequency 10GHz that is coupled with a hybrid ring and the network connecting an inductor series with a varactor to extend a continuous chage in the phase of the reflected output wave to be produced from a variation in the terminated varactor reactance as a variation in the reverse bias voltage. It is manufactured in a microstripline in consideration of an effect of the dispersion characteristics and discontinuities. As a resuls of an experiment, a change in the phase is achieved over 180 degree from $52.34^{\circ}$ degrees to $235.01^{\circ}$degrees, the transmission loss is -3.6~-14.3dB, and the return loss is -16~-8dB(1.37

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Preparation of High Quality ZnO Thin Films by Separated Pulsed Laser Deposition (분리형 펄스 레이져 증착법을 이용한 ZnO 박막의 특성에 관한 연구)

  • Park, Sang-Moo;Lee, Boong-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.818-824
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    • 2008
  • The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

Characterization of structural and field-emissive properties of diamond films in terms of growth conditions and additive gases (증착변수 및 첨가가스에 따른 다이아몬드 박막의 구조적 물성 및 전계방출 특성의 변화 분석)

  • Park, Jae-Hyun;Lee, Tae-Hoon;Park, Chang-Kyun;Seo, Soo-Hyung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1571-1573
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    • 2003
  • Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.

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Surface Modification of WC-Co and SCM415 by the Ion Bombardment Process of Filtered Vacuum Arc Plasma (자장 여과 아크 이온빔 식각 공정을 이용한 WC-Co 및 SCM415 금속 소재 표면 구조 제어 연구)

  • Lee, Seung-Hun;Yoon, Sung-Hwan;Kim, Do-Geun;Kwon, Jung-Dae;Kim, Jong-Kuk
    • Journal of Surface Science and Engineering
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    • v.43 no.2
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    • pp.80-85
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    • 2010
  • The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

The Effects of Process parameters on TiN Films deposited by Ion Plating Technique (이온 플레이팅의 TiN코팅층에 미치는 작업인자의 영향)

  • 백응승;권식철;이상로;이건환
    • Journal of Surface Science and Engineering
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    • v.23 no.2
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    • pp.24-29
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    • 1990
  • The TiN filmms were deposited on the stainless steel substrates by BARE techinique in order to investigate the effects of process parameters such as source-to-substate distance (15-35cm), N2 pressure(4$\times$10-10 -1$\times$10-3mb)and bias voltage(O-2000V), on the deposition rate, the concentration ratio [N/Ti] and the surface color of the films. The deposition rate was deduced from the weight measurement, the [N/ti] ratio by ESCA. The deposition rate decreased with a relationship of=40.2/D2 where D was source-to-substrate distance. The effect of the bias voltage and the N2pressure on the deposition rate, however, appeared negligble. The [N/Ti] ratio was in the narrow range of 0.7 tp 0.8 It increased slightly with the N2 partial pressure and deceased with the source-to-substrate distance. It was confired by ESCA that a significant amount of oxygen and carbon was contaminated after deposition in the top surface of TiN films. The surface color of TiN film was changed from light gold yellow to reddish gold yellow with increasing [N/Ti] ratio.

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Low-Frequency Noise Characteristics of SiGe pMOSFET Depending upon Channel Structures and Bias Conditions (SiGe pMOSFET의 채널구조와 바이어스 조건에 따른 잡음 특성)

  • Choi, Sang-Sik;Yang, Hun-Duk;Kim, Sang-Hoon;Song, Young-Joo;Cho, Kyoung-Ik;Kim, Jeonng-Huoon;Song, Jong-In;Shim, Kyu-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.5-6
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    • 2005
  • High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

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Study of the Effect of $N_2$ Gas in Etched ZnO Thin Films in $Cl_2$/Ar Plasma ($N_2$ 가스를 첨가한 $Cl_2$/Ar 플라즈마에 의해 식각된 ZnO 박막의 식각 특성)

  • Heo, Gyeong-Mu;Park, Jeong-Su;Ju, Yeong-Hui;Woo, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.10a
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    • pp.223-224
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    • 2009
  • 본 연구에서는 $Cl_2$/Ar 기반의 플라즈마 식각에 $N_2$가스를 첨가하여 ZnO 박막을 식각 하였을 때 관찰된 ZnO 박막의 식각 특성에 관하여 연구 하였다. ZnO 박막 식각 실험은 RF 800 W, bias power 400 W, 공정 압력 15 mTorr를 기준으로 하였으며 가스 혼합 비율로는 최적의 식각률을 보여주는 $Cl_2$/Ar=8:2 비율에서 실행하였다. 연구의 목적인 첨가 가스 $N_2$$Cl_2$ (80%)/Ar (20)%에 5 sccm 씩 첨가하여 20 sccm 까지 증가 시켜 실험 하였다. $N_2$ 가스가 15 sccm 첨가되었을 때 식각률 95.9 nm/min로 기존 $Cl_2$/Ar 기반의 플라즈마 식각보다 높은 식각률을 보여 주었으며 $N_2$ 가스 흐름 조절 외에도 공정 압력, RF power, bias power를 변경하며 실험하였다. 식각된 ZnO 박막의 표면은 최대 식각률을 보이는 공정 조건을 찾기 위해 surface profiler ($\alpha$-step)을 이용하여 식각률을 측정하였으며 ZnO 박막 표면의 화학적인 변화를 조사하기 위해 x-ray photoelectron spectroscopy (XPS)를 사용하였다. XPS 분석 결과 Zn $2p_{3/2}$ peak 가낮은 binding energy 쪽으로 이동한 것을 관찰 할 수 있었다. 또한 O 1s 의 스펙트럼을 분석한 결과 N-O bond와 O-H bond가 존재함이 밝혀졌다.

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A Study on the Clinical Study of Herbal Medicine for Glucose-Lipid Metabolism Abnormalities in Polycystic Ovary Syndrome (다낭성 난소 증후군의 당-지질대사 이상에 대한 한약 임상 연구 고찰)

  • Park, Su-Yeon;Park, Kyung-Dug;Yoon, Young-Jin
    • The Journal of Korean Obstetrics and Gynecology
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    • v.32 no.4
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    • pp.67-86
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    • 2019
  • Objectives: The purpose of this study is to investigate the effect of herbal medicine treatment for glucose and lipid metabolic abnormalities caused by polycystic ovary syndrome (PCOS). Methods: We searched for randomized controlled clinical trials (RCTs) in 6 electronic databases and search key words were 'PCOS' and 'chinese medicine' or 'herbal medicine' and 'Metabolic syndrome' or 'glucose' or 'lipid'. The results of the studies were analyzed and the risk of bias was assessed by using Cochrane risk of bias (RoB) tool. Results: We finally selected 7 studies. In 3 of selected studies, herbal medicine was more effective than western medicine in all outcomes and in other 3 selected studies, herbal medicine was partially more effective than western medicine. Conclusions: The study provides a basis for applying herbal medicine treatment to patients with metabolic syndrome caused by PCOS and helps developing a treatment protocol of caring patients with PCOS. But the limitation of this study is that the number of studies included is small and lack of uniformity of outcome indicators made it difficult to observe overall interrelationship between indicators.

An Overview of Clinical Studies for Pompholyx in Traditional Chinese Medicine - Literature Review based on Randomized Controlled Trials - (한포진 치료의 중의학 임상연구 동향 - 무작위 대조군 임상연구를 중심으로 -)

  • Woo, Jeong A;Park, Beom Chan;Choi, Il Shin;Kim, Kibong;Cheon, Jin Hong
    • The Journal of Pediatrics of Korean Medicine
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    • v.35 no.4
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    • pp.82-95
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    • 2021
  • Objectives The purpose of this study is to analyze clinical studies on the effectiveness of TCM (traditional Chinese medicine) for pompholyx treatment and provide evidence for Korean medicine use. Methods Randomized controlled trials (RCT) which used TCM as a treatment for pompholyx were searched in China National Infrastructure (CNKI) platform. The risk of bias of studies was assessed by using Cochrane risk of bias (RoB) 2.0 tool. Results The selected 10 RCTs showed that the experimental group treated with either TCM alone or with a combination of TCM and Western medicine showed more significant therapeutic effect compared to the control group which Western medicine alone. Conclusions Based on the studies from China, TCM may be an effective treatment for pompholyx. This provides evidence for Korean medicine use, and its possible effectiveness in treating pompholyx

The Effect of Sayeok-san for Insomnia: A Systematic Review and Meta-Analysis (사역산(四逆散)의 불면 치료 효과 : 체계적 문헌 고찰 및 메타 분석)

  • Huh, Tae-young;Ha, Da-jung;Kim, Kyoung-min
    • The Journal of Internal Korean Medicine
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    • v.42 no.4
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    • pp.547-562
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    • 2021
  • Objectives: This study evaluated the effectiveness of Sayeok-san for treating insomnia. Methods: We conducted a search using keywords, such as "Sayeoksan", "Si-ni-san", and "insomnia" in eight databases (CNKI, Wanfang, Pubmed, Embase, Cochrane, NDSL, OASIS, RISS) on July 17, 2012. There was no limit placed on the publication period of the papers, and we used Cochrane's risk of bias tool to assess their quality. Meta-analysis was classified according to the outcome measurements, such as total effective rate and PSQI. Results: Nine RCTs were selected. Meta-analysis showed that the treatment group, which used Sayeok-san, had a higher total effective rate than did the control group that used only Western medicine. The treatment group also had a lower average of PSQI and TSS (TCM symptom score) than did the control group. Conclusion: This study suggests that Sayeok-san is effective in treating insomnia. However, these findings should be interpreted cautiously due to unknown or high risk of bias of the included trials.