Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Preparation of High Quality ZnO Thin Films by Separated Pulsed Laser Deposition

분리형 펄스 레이져 증착법을 이용한 ZnO 박막의 특성에 관한 연구

  • Published : 2008.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

Keywords

References

  1. Frans C. M. Van De Pol, "Thin-film znO, properties and applications", Ceramic Bulletin, Vol. 69, p. 1959, 1990
  2. S.-M. Park, T. Ikegami, and K. Ebihara, "Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition", Thin Solid Films, Vol. 513, p. 90, 2006 https://doi.org/10.1016/j.tsf.2006.01.051
  3. S.-M. Park, T. Ikegami, and K. Ebihara, "Growth of transparent conductive Al-doped ZnO thin films and device applications", Japanese Journal of Applied Physics, Vol. 45, No. 10B, p. 8453, 2006 https://doi.org/10.1143/JJAP.45.8453
  4. D. G. Thomas, "The exciton spectrum of zinc oxide", J. Phys. Chem. Solids, Vol. 15, p. 86, 1960 https://doi.org/10.1016/0022-3697(60)90104-9
  5. S. C. Binari and H. B. Dietrich, "III-V Nitride Electronic Device", in Optoelectronic Properties of Semiconductors and Superlattices, The Netherlands, p. 513, 1997
  6. N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, "Pfoduction of nitrogen acceptors in znO by thermal annealing", Appl. Phys. Lett., Vol. 80, p. 1334, 2002 https://doi.org/10.1063/1.1450041
  7. D. B. Chrisey and G. K. Hubler, "Pulsed Laser Deposition of Thin Films", Wiley, New York, p. 327, 1994
  8. K. Ebihara, S.-M. Park, K. Fujii, and T. Ikegami, "ZnO nanostructured film deposition using the separated pulsed laser deposition", Thin Solid Films, Vol. 515, p. 6368, 2007 https://doi.org/10.1016/j.tsf.2006.11.168
  9. T. Ohshima, R. K. Thareja, T. Ikegami, K. Ebihara, and J. Narayan, "Laser-ablated plasma for deposited of ZnO thin films on various substrates", Sci. Tech. Adv. Mat., Vol. 2, p. 517, 2001 https://doi.org/10.1016/S1468-6996(01)00132-2
  10. H.-J. Egelhaaf and D. Oelkrug, "Luminescence and nonradiative of excited states involving oxygen defect centers in polycrystalline ZnO", J. Crys. Grow., Vol. 161, p. 190, 1996 https://doi.org/10.1016/0022-0248(95)00634-6
  11. Y. G. Wang, S. P. Lau, X. H. Zhang, H. W. Lee, S. F. Yu, B. K. Tay, and H. H. Hng, "Evolusion of visible luminescence in ZnO by thermal oxidation of Zinc films", Chem. Phys. Lett., Vol. 375, p. 113, 2003 https://doi.org/10.1016/S0009-2614(03)00842-X