• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.12
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• pp.1684-1690
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• 2018

A new digital pre-distortion (DPD) technique for closely spaced dual-band signals is proposed. In the system under consideration, dual-band signals are amplified by a single broadband power amplifier (PA) at a transmitter. The PA output is distorted by cross-modulation between the two bands as well as their own inter-modulation distortion. Especially, if the two bands are placed in close proximity to each other, their spectral regrowths due to in-band intermodulation overlap with each other, which degrades DPD performance. To solve this problem, we propose a new DPD technique where the dual-band PA characteristics are estimated first, and then the DPD parameters are obtained from the estimated PA characteristics. By finding the DPD parameters through two steps, pre-distortion can perform well for the closely-spaced dual band signals. The proposed technique is verified through computer simulation. Simulation result shows that the proposed method performs better than the conventional method for closely-spaced dual band signals.

• Journal of IKEEE
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• v.23 no.3
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• Journal of the Korean Institute of Navigation
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• v.23 no.3
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• pp.29-34
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• 1999

In this paper, an X-band power amplifier using GaAs FET was designed and fabricated, which is to be used as SART transmitter sweeping at the frequency range of 9.2 GHz~9.5 GHz. The amplifier is consist of two stages using ATF-46101 FET of Hewllett-Packard. Finally, the amplifier using microstrip line matching solution shows that MAG is 23 dB at the center frequency of 9.35 GHz.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2804-2806
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• 1999

This paper presents a voltage regulator for an AC power supply. It is designed to have the band Pass filter characteristic for the system to be free from DC-offset or sub-frequency fluctuation in the output voltage wave

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.177-180
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• 1999

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24~28㎓. The amplifier has a small signal gain of 18.6㏈ at 24.5㎓ and 16.7㏈ at 27.1㎓. It achieved output powers of 19.8㏈m with PAE of 19.8% at 24.5㎓ and 18.8㏈m at 27.1㎓.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.403-409
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• 2013

In this work, a CMOS two stage differential power amplifier which includes Marchand balun, transformer and injection-locked buffer is presented. The power amplifier is targeted for 70 GHz frequency band and fabricated using 65 nm technology. The measurement results show 8.5 dB maximum voltage gain at 71.3 GHz and 7.3 GHz 3 dB bandwidth. The measured maximum output power is 8.2 dBm, input $P_{1dB}$ is -2.8 dBm, output $P_{1dB}$ is 4.6 dBm and maximum power added efficiency is 4.9 %. The power amplifier consumes 102 mW DC power from 1.2 V supply voltage.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.1-7
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• 2012

In this paper, An X-band solid state power amplifier(SSPA) for pulse compressed microwave signal with 60Watt power and power added efficiency(PAE) above 30% is described. Designed 60Watt high power amplifier(HPA) was implemented by cascade coupled amplifiers, and it is consisted on three stage drive amplifiers with internally matched GaAs FET and one stage main power amplifier with an internally matched GaN HEMT. The designed SSPA has performance with more than total power gain 37dB and output power 48dBm(60-W) in condition of frequency range $9.41{\pm}0.03GHz$, pulse period width under 1ms and duty cycle under 10%. The implemented SSPA can apply to high quality digital marine radar applications with pulse compression technique.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1854-1860
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• 2014

In this paper, the energy saving on mobile communication repeater is studied. DB(Dual Band) small repeater, which is currently used in the field for indoor coverage, is adopted as a test unit. For reducing the power consumption, PFC (Power Factor Correction) is included on SMPS (Switching Mode Power Supply) of the DB small repeater. The test results show that approximately 38.9% of the power consumption is reduced comparing with the repeater without PFC. It means that approximately 230.43kWh per unit can be saved annually.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.