A Study on the Design and Fabrication of X-band Power Amplifier for SART

SART용 X-밴드 전력증폭기의 설계와 제작에 관한 연구

  • 김철수 (목포해양대학교 해양전자ㆍ통신공학부) ;
  • 김미숙 (목포해양대학교 대학원) ;
  • 최병하 (목포해양대학교 해양전자ㆍ통신공학부)
  • Published : 1999.09.01

Abstract

In this paper, an X-band power amplifier using GaAs FET was designed and fabricated, which is to be used as SART transmitter sweeping at the frequency range of 9.2 GHz~9.5 GHz. The amplifier is consist of two stages using ATF-46101 FET of Hewllett-Packard. Finally, the amplifier using microstrip line matching solution shows that MAG is 23 dB at the center frequency of 9.35 GHz.

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