Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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PHEMT MMIC Broad-Band Power Amplifier for LMDS

Ka 대역 광대역 MMIC 전력증폭기

  • 백경식 (안양대학교 정보통신공학과) ;
  • 김영기 (안양대학교 정보통신공학과) ;
  • 맹성재 (한국전자통신연구원 반도체화학물연구실) ;
  • 이진희 (한국전자통신연구원 반도체화학물연구실) ;
  • 박철순 (한국전자통신연구원 반도체화학물연구실)
  • Published : 1999.11.01
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Abstract

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24~28㎓. The amplifier has a small signal gain of 18.6㏈ at 24.5㎓ and 16.7㏈ at 27.1㎓. It achieved output powers of 19.8㏈m with PAE of 19.8% at 24.5㎓ and 18.8㏈m at 27.1㎓.

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