• Current Photovoltaic Research
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• v.3 no.4
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• pp.116-120
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• 2015

A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of $15.9{\Box}/{\Omega}$ with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.

• Journal of Agricultural Extension & Community Development
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• v.6 no.2
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• pp.39-51
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• 1999

For the last 10 years, many institutions have tried to build more effective rural information system. They have devoted most effort to build DB/NWs for agribusiness, farmers, and rural community. However, their information system has not satisfied the demands on farm. To meet the farmer's demands, rural information system should be a farm-oriented, educational, democratic, realistic, and comprehensive information system. Few suggestions are raised to build successful information based agriculture and rural community. First, we should focus more on developing a farm based MIS SWs rather than the DB/NWs. Second, we should emphasize education and AS of information system more than development of the system. Third, governments should invest more to build better information infrastructure for rural community including information super highways.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.530-534
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• 2017

Transparent film heaters employing silver nanowires (Ag NWs) have attracted increasing attention because of their widespread applications. However, the low thermal resistance of Ag NWs limits the maximum operating temperature of the Ag NW film heater. In this study, Ag NW film heaters with high mechanical and thermal stability were successfully developed. The thermal power-out characteristics of the Ag NW heaters were investigated as a function of the Ag NW density. The results revealed that the prepared flexible Ag NW heater possessed high thermal stability over $190^{\circ}C$ owing to ZnO encapsulation. This indicates that the Ag NW film with excellent thermal stability have remarkably high potential for use as electrodes in film heaters operating at high temperatures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.13-13
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• 2010

The solar energy conversion will take 10 % global energy need by 2033. A thin film type solar cell has been considered as one of the promising candidates for a large area applicable solar cell fabrication at a low cost. The metal-assisted growth of microcrystalline Si (mc-Si) films has been reported for a quality Si film synthesis at a low temperature. It discusses the spontaneous growth of a Si film above a metal-layer for a thin film solar cell. Quite recently, a substantial demand of nanomaterials has been addressed for cost-effective solar cells. The nanostructure provides a large photoactive surface at a fixed volume, which is an advantage in the effective use of solar power. But the promising of nanostructure active solar cell has not been much fulfilled due mainly to the difficulty in architecture of nanostructures. We present here the Si nanowire (SiNW)-embedded Schottky solar cell. Multiple SiNWs were connected to two different metals to form a Schottky or an ohmic contact according to the metal work function values. It discusses the scheme of rectifying contact between metals and SiNWs and the SiNW-embedded Schottky solar cell performances.

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Nano
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• v.13 no.12
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• pp.1850146.1-1850146.9
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• 2018

The rapid development of smart textiles requires the large-scale fabrication of conductive fibers. In this study, we develop a simple, scalable and low-cost capillary-driven self-assembly method to prepare conductive fibers with uniform morphology, high conductivity and good mechanical strength. Fiber-shaped flexible and stretchable conductors are obtained by coating highly conductive and flexible silver nanowires (Ag NWs) on the surfaces of yarn and PDMS fibers through evaporation-induced flow and capillary-driven self-assembly, which is proven by the in situ optical microscopic observation. The density of Ag NWs and linear resistance of the conductive fibers could be regulated by tuning the assembly cycles. A linear resistance of $1.4{\Omega}/cm$ could be achieved for the Ag NWs-coated nylon, which increases only 8% after 200 bending cycle, demonstrating high flexibility and mechanical stability. The flexible and stretchable conductive fibers have great potential for the application in wearable devices.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.502-509
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• 2018

Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.137-146
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• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).