Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Epitaxial Growth of ZnO Nanowires on Sapphire (001) Substrates Using a Hydrothermal Process

수열합성법을 이용한 산화아연 나노와이어의 에피택시 성장

  • Ham, Daseul (Department of Materials Science and Engineering, Chosun University) ;
  • Jeong, Byeong Eon (Department of Materials Science and Engineering, Chosun University) ;
  • Yang, Myeong Hun (Department of Materials Science and Engineering, Chosun University) ;
  • Lee, Jong Kwan (Department of Materials Science and Engineering, Chosun University) ;
  • Choi, Young Bin (Department of Materials Science and Engineering, Chosun University) ;
  • Kang, Hyon Chol (Department of Materials Science and Engineering, Chosun University)
  • 함다슬 (조선대학교 재료공학과) ;
  • 정병언 (조선대학교 재료공학과) ;
  • 양명훈 (조선대학교 재료공학과) ;
  • 이종관 (조선대학교 재료공학과) ;
  • 최영빈 (조선대학교 재료공학과) ;
  • 강현철 (조선대학교 재료공학과)
  • Received : 2018.08.11
  • Accepted : 2018.08.21
  • Published : 2018.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.

Keywords

References

  1. D. C. Look, B. Claflin, Y. I. Alivov, and S. J. Park, Phys. Status Solidi A, 201, 2203 (2004). [DOI: https://doi.org/10.1002/pssa.200404803]
  2. U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys., 98, 041301 (2005). [DOI: https://doi.org/10.1063/1.1992666]
  3. B. Hussain, A. Ebong, and I. Ferguson, Sol. Energy Mater. Sol. Cells, 139, 95 (2015). [DOI: https://doi.org/10.1016/j.solmat.2015.03.017]
  4. Y. J. Lee, D. S. Ruby, D. W. Peters, B. B. McKenzie, and J.W.P. Hsu, Nano Lett., 8, 1501 (2008). [DOI: https://doi.org/10.1021/nl080659j]
  5. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett., 82, 733 (2003). [DOI: https://doi.org/10.1063/1.1542677]
  6. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., Appl. Phys. Lett., 82, 1117 (2003). [DOI: https://doi.org/10.1063/1.1553997]
  7. R. Navamathavan, C. K. Choi, E. J. Yang, J. H. Lim, D. K. Hwang, and S. J. Park, Solid-State Electron., 52, 813 (2008). [DOI: https://doi.org/10.1016/j.sse.2007.11.010]
  8. S. H. Seo and H. C. Kang, Thin Solid Films, 518, 5164 (2010). [DOI: https://doi.org/10.1016/j.tsf.2010.03.032]
  9. A. H. Adl, A. Ma, M. Gupta, M. Benlamri, Y. Y. Tsui, D. W. Barlage, and K. Shankar, ACS Appl. Mater. Interfaces, 4, 1423 (2012). [DOI: https://doi.org/10.1021/am201656h]
  10. J. H. Kim, M. S. Lee, and H. C. Kang, J. Korean Phys. Soc., 66, 229 (2015). [DOI: https://doi.org/10.3938/jkps.66.229]
  11. T. Pauporte, D. Lincot, B. Viana, and F. Pelle, Appl. Phys. Lett., 89, 233112 (2006). [DOI: https://doi.org/10.1063/1.2402223]
  12. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater., 13, 113 (2001). [DOI: https://doi.org/10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H]
  13. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Jhonson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem. Int. Ed., 115, 3139 (2003). [DOI: https://doi.org/10.1002/ange.200351461]
  14. Y. Li, G. Duan, G. Liu, and W. Cai, Chem. Soc. Rev., 42, 3614 (2013). [DOI: https://doi.org/10.1039/C3CS35482B]
  15. S. Kim and H. C. Kang, J. Korean Phys. Soc., 69, 778 (2016). [DOI: https://doi.org/10.3938/jkps.69.778]
  16. H. Huang, H. Wang, B. Li, X. Mo, H. Long, Y. Li, H. Zhang, D. L. Carroll, and G. Fang, Nanotechnology, 24, 315203 (2013). [DOI: https://doi.org/10.1088/0957-4484/24/31/315203]
  17. R. M. Tripathi, A. S. Bhadwal, R. K. Gupta, P. Singh, A. Shrivastav, and B. R. Shrivastav, J. Photochem. Photobiol., B, 141, 288 (2014). [DOI: https://doi.org/10.1016/j.jphotobiol.2014.10.001]
  18. N. Wang, Y. Cai, and R. Q. Zhang, Mater. Mater. Sci. Eng., 60, 1 (2008). [DOI: https://doi.org/10.1016/j.mser.2008.01.001]
  19. M. J. Bierman, Y.K.A. Lau, A. V. Kvit, A. L. Schmitt, and S. Jin, Science, 320, 1060 (2008). [DOI: https://doi.org/10.1126/science.1157131]
  20. L. Luo, B. D. Sosnowchik, and L. Lin, Nanotechnology, 21, 495502 (2010). [DOI: https://doi.org/10.1088/0957-4484/21/49/495502]
  21. J. Yeo, S. Hong, G. Kim, H. Lee, Y. D. Suh, I. Park, C. P. Grigoropoulos, and S. H. Ko, ACS Nano, 9, 6059 (2015). [DOI: https://doi.org/10.1021/acsnano.5b01125]
  22. L. V. Podrezova, S. Porro, V. Cauda, M. Fontana, and G. Cicero, Appl. Phys. A, 113, 623 (2013). [DOI: https://doi.org/10.1007/s00339-013-7838-5]
  23. D. Yu, T. Trad, J. T. McLeskey Jr, V. Craciun, and C. R. Taylor, Nanoscale Res. Lett., 5, 1333 (2010). [DOI: https://doi.org/10.1007/s11671-010-9649-3]
  24. F. Meng, S. A. Morin, A. Forticaux, and S. Jin, Acc. Chem. Res., 46, 1616 (2013). [DOI: https://doi.org/10.1021/ar400003q]
  25. W. Y. Wu, C. C. Yeh, and J. M. Ting, J. Am. Chem. Soc., 92, 2718 (2009). [DOI: https://doi.org/10.1111/j.1551-2916.2009.03022.x]
  26. S. H. Kim, C. S. Lee, J. Kim, J. W. Cho, and Y. K. Kim, AIP Adv., 3, 092132 (2013). [DOI: https://doi.org/10.1063/1.4824311]
  27. H. C. Kang, S. H. Seo, and D. Y. Noh, J. Mater. Res., 16, 1814 (2001). [DOI: https://doi.org/10.1557/JMR.2001.0250]
  28. S. I. Park, T. S. Cho, S. J. Doh, J. L. Lee, and J. H. Je, Appl. Phys. Lett., 77, 349 (2000). [DOI: https://doi.org/10.1063/1.126972]
  29. A. A. Sokol, S. A. French, S. T. Bromley, C.R.A. Catlow, H.J.J. van Dam, and P. Sherwood, Faraday Discuss., 134, 267 (2007). [DOI: https://doi.org/10.1039/B607406E]
  30. H. G. Chen, C. W. Wang, and Z. F. Tu, Mater. Chem. Phys., 144, 199 (2014). [DOI: https://doi.org/10.1016/j.matchemphys.2013.12.044]