Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Hybrid Transparent Conductor by using Solution-Processed AgNWs for High-Performing Si Photodetectors

  • Kim, Hong-Sik (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University)
  • Received : 2015.10.17
  • Accepted : 2015.11.05
  • Published : 2015.12.31
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Abstract

A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of $15.9{\Box}/{\Omega}$ with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.

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References

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