• 한국분말재료학회지
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• 제17권1호
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• pp.36-43
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• 2010

In present work, amorphous TiCuNi powders were fabricated by mechanical alloying process. Amorphization and crystallization behaviors of the TiCuNi powders during high-energy ball milling and subsequent microstructure changes were studied by X-ray diffraction and transmission electron microscope. TEM samples were prepared by the focused ion beam technique. The morphology of powders prepared with different milling times was observed by field-emission scanning electron microscope and optical microscope. The powders developed a fine, layered, homogeneous structure with milling times. The crystallization behavior showed that glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 628, 755 and 127K, respectively. The as-prepared amorphous TiCuNi powders were consolidated by spark plasma sintering process. Full densified TiCuNi samples were successfully produced by the spark plasma sintering process. Crystallization of the MA powders happened during sintering at 733K.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.241-243
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

• Journal of Information Display
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• 제4권1호
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• pp.34-37
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• 2003

We investigate the solid phase crystallization of amorphous Si films on glass substrates under alternating magnetic field induction. The kinetics of crystallization are found to be greatly enhanced by alternating magnetic field. While complete crystallization takes heat treatment of more than 14 hours at 570$^{\circ}C$, it can be reduced by applying the megnetic field to 20 minutes. It is assumed that the enhancement of crystallization is associated with an electromotive force voltage generated by alternating magnetic field. This electric field applied in the amorphous Si may possibly be the reason for acceleration of the atomic mobility of crystallization through the modification of atomic potentials

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• 한국재료학회지
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• 제4권6호
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• pp.644-650
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• 1994

Electrohydrodynamic Atomization 급냉응고장치를 이용하여 고순도 실리콘 미세분말을 제조하여 투과전자현미경으로 미세조직과 그 응고상을 조사한 결과 직경이 60nm 이하인 분말에서 비장질상이 발견되었다. 비정질 실리콘의 원자구조를 분석하기 위하여 비정질 분말에서 얻은 전자회절 데이타를 이용하여 radial distribution function을 계산하여 해석한 결과, 실리콘의 결정구조인 다이아몬드 입방격자에서 발견되는 기본적 정사면체 배열이 비정질 실리콘의 2번째 근접원자간 거기까지 유지됨을 알 수 있었으며 이로부터 비정질 실리\ulcorner이 단범위 규칙성을 갖는 tetrahedrally coordinated random network 원자배열로 이루어짐을 알았다.

• 한국분말재료학회지
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• 제15권4호
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• pp.285-291
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• 2008

Fe based ($Fe_{68.2}C_{5.9}Si_{3.5}B_{6.7}P_{9.6}Cr_{2.1}Mo_{2.0}Al_{2.0}$) amorphous powder were produced by a gas atomization process, and then ductile Cu powder fabricated by the electric explosion of wire(EEW) were mixed in the liquid (methanol) consecutively. The Fe-based amorphous - nanometallic Cu composite powders were compacted by a spark plasma sintering (SPS) processes. The nano-sized Cu powders of ${\sim}\;nm$200 produced by EEW in the methanol were mixed and well coated with the atomized Fe amorphous powders through the simple drying process on the hot plate. The relative density of the compacts obtained by the SPS showed over 98% and its hardness was also found to reach over 1100 Hv.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• 열처리공학회지
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• 제31권4호
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• pp.165-170
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• 2018

W, Fe, and carbon powders were mechanical alloyed to produce $W_{35}Fe_{43}C_{22}$ ternary alloy powders containing nanocrystal W embedded within amorphous matrix. When the powder samples were heated to the primary crystallization temperature of $735^{\circ}C$, most parts of their amorphous region were fully crystallized to [W,Fe]-rich $M_6C$ carbides. Interestingly, a little portion of the carbides changes to stoichiometric line compounds ($M_{12}C$ and $W_6Fe_7$) and a solution phase (Fe-rich bcc), and remaining parts of the crystallites were amorphized again. The resulting microstructure was retained even by cyclic heating between room temperature of $1,200^{\circ}C$, and thus we found that the amorphous structure can be irreversibly formed at above glass transition temperature.

• 한국표면공학회지
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• 제51권4호
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.453-453
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• 2009