Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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P-type Electrical Characteristics of the Amorphous La2NiO4+δ Thin Films

  • Hop, Dang-Hoang (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Jung-A (School of Materials Science and Engineering, Kyungpook National University) ;
  • Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University)
  • Received : 2018.07.03
  • Accepted : 2018.08.31
  • Published : 2018.08.31
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Abstract

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

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References

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