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The Study on the Characteristic of Phase Transition in Differential Thickness of Se1Sb2Se2 Thin Films

  • Lee Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Yang Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • Published : 2004.12.01

Abstract

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

Keywords

References

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  1. Characteristics on electrical resistance change of Ag doped chalcogenide thin film application for programmable metallization cell vol.23, pp.2-4, 2009, https://doi.org/10.1007/s10832-008-9448-8
  2. A study of thin-film electrolyte with amorphous chalcogenide materials vol.T139, 2010, https://doi.org/10.1088/0031-8949/2010/T139/014030