• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.32-35
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• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• 한국진공학회지
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• 제19권1호
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• pp.36-44
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• 2010

관경이 수 mm인 세관 램프 내부에서 플라즈마의 확산을 조사하기 위하여 이극성(ambipolar) 확산방정식을 해하였다. 반경 방향의 확산에 의한 유리관 벽에서의 플라즈마 소멸 특성시간은 $\tau_r\;=\;(r_0/2.4)^2/D_a$로 주어진다. 반경 $r_0{\sim}1\;mm$이고 이극성 확산계수 $D_a{\sim}0.01\;m^2/s$ 이면, $\tau_r{\sim}17\;{\mu}s$이다. 이는 램프의 교류전원 구동에서 플라즈마를 유지하기 위한 구동 최소 주파수 ~30 kHz에 해당한다. 고전압이 인가되는 전극부에 발생한 고밀도의 플라즈마가 양광주로 확산되는 특성시간은 $\tau_z{\sim}0.1\;s$이다. 고밀도 플라즈마 경계에서의 시간에 대한 확산속도는 $t{\sim}10^{-6}\;s$일 때 $u_D{\sim}10^2\;m/s$이고, $t{\sim}10^{-3}\;s$이면 그 속도는 $u_D{\sim}1\;m/s$로 느려진다. 따라서 램프 길이 ~1 m에 대하여 전극부에서 생성된 고밀도 플라즈마가 양광주 전체로 확산되는 시간은 수 초가 걸린다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.207-207
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• 2016

plasma group velocities of neon with oxygen admixture (ug) are obtained by intensified charge coupled device (ICCD) camera images at fixed gate width time of 5 ns. The propagation velocities outside interelectrode region are in the order of 104 m/s.The plasma ambipolar diffusion velocities are calculated to be in the order of 102 m/s. Plasma jet is generated by all fixed sinusoidal power supply, total gas flow and repetition frequency at 3 kV, 800 sccm and 40 kHz, respectively. The amount of oxygen admixture is varied from 0 to 2.75 %. By employing one dimensional convective wave packet model, the electron temperatures in non-thermal atmospheric-pressure plasma jet are estimated to be in a range from 1.65 to 1.95 eV.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.156.1-156.1
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• 2015

Neon and argon plasma group velocities (ug) are obtained by intensified charge coupled device (ICCD) camera images at fixed gate width time of 5 ns. The propagation velocities in upstream and downstream region are in the order of 104-105 m/s. The plasma ambipolar diffusion velocities are calculated to be in the order of 101-102 m/s. Plasma jet is generated by sinusoidal power supply in varying voltages from 1 to 4 kV at repetition frequency of 40 kHz. By employing one dimensional convective wave packet model, the neon and argon electron temperatures in non-thermal atmospheric-pressure plasma jet are estimated to be 1.95 and 1.18 eV, respectively.

• 조명전기설비학회논문지
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• 제18권1호
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• pp.9-14
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• 2004

본 논문에서는 내부 입자의 반경방향 분포와 구동회로를 고려한 형광램프 모델링을 수행하였다. 모델링에서 전자에너지 분포는 Maxwellian으로 가정하였으며, 전자 이동도와 유극성 확산계수는 상수를 사용하였다. 방전 중 수은원자는 6가지 에너지레벨을 갖는다고 가정하였다. 모델을 사용하여 4개의 편미분 2개의 상미분 연립방정식을 FDM과 2계 Runge-Kutta 방법을 사용하여 수치적으로 해를 구하였다. 개발한 모델을 실제 형광램프와 LR안정기 회로에 적용하여 실험적으로 측정한 전압, 전류 파형과 수치해석적으로 구한 전압, 전류 파형을 비교하여, 본 형광램프 모델링의 타당성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.246-252
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• 2002

Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

• 대한전자공학회논문지
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• 제26권5호
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• pp.38-45
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• 1989

보론이 100ppm으로 도우핑된 비정질 실리콘을 이용한 쌍극 박막 트랜지스터를 CVD 방법으로 제작하여 전기적 특성을 조사하였다. 쌍극 박막 트랜지스터에 인가한 트레인 전압이 증가하면 정공채널의 드레인 전류는 전자와 정공의 주입에 의해 크게 증가한다. 또한 게이트 전압의 인가 시간에 따른 드레인 전류는 streched exponential로 감소하는데, 이는 전자축적층에 의해 생기는 댕글린 본드 밀도의 변화가 수소의 확산과 동일한 시간 의존성을 갖는 것을 의미한다. 이러한 실험 결과로 부터 보론이 도우핑된 수소화된 비정질 실리콘에 게이트 전압을 인가하거나, 빛 조사시 도우핑 효율이 변화함을 알 수 있다.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1389-1395
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• 2007

Two series of new organic fluorophores such as asymmetrical 3-(benzimidazol-2-yl)-10-hexylphenothiazine derivatives 1 and symmetrical 3,7-bis(benzimidazol-2-yl)-10-hexylphenothiazine derivatives 2 have been synthesized. Electronic absorption, fluorescence, and electrochemistry measurements reveal that the electron withdrawing benzimidazole subunit directly connected to the phenothiazine core facilitates the charge transfer characters which were also verified by the theoretical calculations. Various substituents on the benzimidazole moieties can allow a fine-tuning of the LUMO energy levels of the molecules without significantly affecting the HOMO energy levels. The method provides a new route for designing ambipolar molecules whose energy levels are well-matched with the Fermi levels of the electrodes to facilitate the electron or hole injection/transfer in OLED devices.