• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Journal of Powder Materials
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• v.26 no.1
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• pp.22-27
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• 2019

In this study, the effects of powder size and composition on the reflectance of Al-Si based alloys are presented. First, the reflectance of Al-Si bulk and powder are analyzed to confirm the effect of powder size. Results show that the bulk has a higher reflectance than that of powder because the bulk has lower surface defects. In addition, the larger the particle size, the higher is the reflectance because the interparticle space decreases. Second, the effect of composition on the reflectance by the changing composition of Al-Si-Mg is confirmed. Consequently, the reflectance of the alloy decreases with the addition of Si and Mg because dendrite Si and $Mg_2Si$ are formed, and these have lower reflectance than pure Al. Finally, the reflectance of the alloy is due to the scattering of free electrons, which is closely related to electrical conductivity. Measurements of the electrical conductivity based on the composition of the Al-Si-Mg alloy confirm the same tendency as the reflectance.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.393-399
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• 1998

The composition and the properred orientation of Co-Fe-Cr alloy electrodeposits were invesigated according to the electrolysis conditions using sulface bath. The current efficiency and the cathode overpotential decrased noticeably with the increase of Cr content in the bath. As the D.C. current density increased increased, the Cr content in the alloy increasd, while Co content decreased and Fe content remained constant, In the pulse current electrolysis, the Cr content of the alloy increased with the mean current density and off-time and then its content increased mord more noticeably with the peak current density than that of D.C. electrolysis. The preferred orientation of the alloy changed from (220)+(111) to (220) with decreasing cathode overpotential.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.232-240
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• 2002

The composition and the microstructure of the Zn-Cr alloys electroplated in chloride bath with EDTA were studied according to electrolysis conditions. The cathode current efficiency decreased with increasing both Cr/(Cr+Zn) ratio and current density. The Cr content of the alloy deposits increased with Cr/(Cr+Zn) ratio and current density The phase structure of Zn-Cr alloy deposits changed from η-Zn through η-Zn+${\gamma}$'-ZnCr to ${\gamma}$'-ZnCr with increasing Cr content of alloys. The surface morphology of Zn-Cr alloy deposits changed from fine needle shaped crystallites through the mixed structure of needle-shaped and granular one to the colony structure with fine granular crystallites according to the change of phase structure

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.602-607
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• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.654-655
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• 2006

This is about the effects deoxidization, carbonization and alloying preparation on fine grain W, WC, and grade YG8 powder reduced by "yellow tungsten oxide" and "blue tungsten oxide". The result indicates that yellow tungsten has single composition and blue tungsten oxide has complex composition. With this feature, yellow tungsten oxide got better uniformity and concentration distribution on fine particle size W and WC powder than blue tungsten oxide's. The grade alloy YG8 that made of this W or WC powder has uniform alloy construction, concentrated WC grain distribution and better alloy properties.

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.197-206
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• 1989

The Composition and throwing power-of Pb-Sn alloy deposits are investigated in tems of the pulse parameters in pulse plating. Microhardness and intermal srress of alloy deposots are measured. The current efficiency of pulse plating is lower than that of D.C.plating while cathode overpotential and macro-throwing power noticebly increase with increasing peak current density. The Pb content of P.C. plated alloy deposits with increasing average current density, is relatively lower than of D.C. plated deposits at the same average current density. The internal stress of Pb-Sn alloy is not detected and the microhardness are 9.0kg/mm2 and 11kg/mm2 for D.C. plated P.C. plated deposits, respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.