• Journal of IKEEE
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• v.17 no.3
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• pp.229-233
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• 2013

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

• Journal of Power Electronics
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• v.12 no.5
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• pp.842-850
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• 2012

Learning Power Electronics is essential in both electrical and electronic engineering fields and the introductory courses are similar in many universities. Taking this premise into account, an educational computer-aided platform for power electronics will be presented in this paper. This educational platform includes an e-book, a set of power electronics animations, Java simulations, as well as several hands-on training sessions. The main advantages of this platform are twofold. First, all necessary teaching tools are combined on a single platform. And secondly, access to this platform is available free of charge and with no complicated registration requirements. In addition to traditional teaching techniques, the use of this platform has demonstrated an increase in student participation and has consistently improved their academic performance. Data consist of surveys, which guarantee both reliability and validity through psychometric techniques.

• Proceedings of the Korea Information Processing Society Conference
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• 2013.05a
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• pp.21-23
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• 2013

Static Random Access Memory (SRAM) using CMOS technology has many advantages. It does not need to refresh every certain time, as a result, the speed of SRAM is faster than Dynamic Random Access Memory (DRAM). This is the reason why SRAM is widely used in almost processors and system on chips (SoC) which require high processing speed. Two basic operations of SRAM are read and write. We consider two basic factors, including the accuracy of read and write operations and the speed of these operations. In our paper, we propose the read and write assist circuits for SRAM. By adding a power control circuit in SRAM, the write operation performed successfully with low error ratio. Moreover, the value in memory cells can be read correctly using the proposed pre-charge method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• International Journal of Advanced Culture Technology
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• v.9 no.3
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• pp.327-333
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• 2021

Inbody is a tool for measuring health information with high reliability and accuracy to analyze body composition. Unlike the existing method of storing/processing and outputting data on the server side, the health information generated by InBody requires accurate support for health sharing and data analysis services using mobile devices. However, in the process of transmitting body composition measurement information to a mobile service, a problem may occur in data transmission/reception processing. The reason for this is that, since the network network in the cloud environment is used, if the connection is cut off or the connection is changed, it is necessary to provide a global service, not a temporary area, focusing on the mobility of InBody information. In addition, since InBody information is transmitted to mobile devices, a standard schema should be defined in the mobile cloud environment to enable information transfer between standardized InBody data and mobile devices. We propose a mobile cloud system using EMRA(Extended Metadata Registry Access) in which a mobile device processes and transmits body data generated in the inbody and manages the data of each local organization with a standard schema. The proposed system processes the data generated in InBody and converts it into a standard schema using EMRA so that standardized data can be transmitted. In addition, even when the mobile device moves through the area, the coordinator subsystem is in charge of providing access services. In addition, EMRA is applied to the collision problem due to schema heterogeneity occurring in the process of accessing data generated in InBody.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.4
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• pp.16-25
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• 1997

This paper shows a SDRAM opeating in 200MHz clock cycle which it use data interleave and pipelining for high speed operation. We proposed NdC (Negative DEaly circuit) to improve clock to access time(tAC) characteristics, also we proposed low power WL(wordline)driver circit and high efficiency VPP charge-pump circit. Our all circuits has been fabricated using 0.4um CMOS process, and the measured maximum speed is 200Mbytes/s in LvTTL interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.133-136
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• 1998

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films prepared by the Langmuir-Blodgett technique.

• Electronics and Telecommunications Trends
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• v.17 no.1 s.73
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• pp.72-84
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• 2002

본 고에서는 최근 제정된 일본의 접속료 규칙에 대한 근거 법률을 비롯하여 접속료 규칙의 주요 내용을 살펴보았다. 그리고 그 규칙에 대하여 통신 사업자들이 제시하고 있는 의견과 거기에 대한 총무성(과거 우정성)의 견해를 살펴보고, 우리에게 주는 시사점을 간략히 고찰하였다. 아직까지 관련 규정이 미비되어 있는 우리 나라의 입장에서 앞으로 접속료 규칙을 제정하고자 할 때 본 고는 참고자료로 활용될 수 있을 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.261-261
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• 2016

플래시 메모리 (flash memory)는 DRAM(dynamic racdom access memory)이나 SRAM(static random access memory)에 비해 소자의 구조가 매우 단순하기 때문에 집적도가 높아서 기기의 소형화가 가능하다는 점과 제조비용이 낮다는 장점을 가지고 있다. 또한, 전원을 차단하면 정보가 사라지는 DRAM이나 SRAM과 달리 전원이 꺼지더라도 저장된 정보가 지워지지 않는다는 특징을 가지고 있어서 ROM(read only memory)과 정보의 입출력이 자유로운 RAM의 장점을 동시에 가지기 때문에 활용도가 크다. 또한, 속도가 빠르고 소비전력이 작아서 USB 드라이브, 디지털 TV, 디지털 캠코더, 디지털 카메라, 휴대전화, 개인용 휴대단말기, 게임기 및 MP3 플레이어 등에 널리 사용되고 있다. 특히, 낸드(NAND)형의 플래시 메모리는 고집적이 가능하며 하드디스크를 대체할 수 있어 고집적 음성이나 화상 등의 저장용으로 많이 쓰이며 일정량의 정보를 저장해두고 작업해야 하는 휴대형 기기에도 적합하며 가격도 노어(NOR)형에 비해 저렴하다는 장점을 가진다. 최근에는 smart watch, wearable device 등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 투명하고 유연한 메모리 소자에 대한 연구가 다양하게 진행되고 있으며 유리나 플라스틱과 같은 기판 위에서 투명한 플래시 메모리를 형성하는 기술에 대한 관심이 높아지고 있다. 전하트랩형 (charge trap type) 플래시 메모리는 플로팅 게이트형 플래시 메모리와는 다르게 정보를 절연막 층에 저장하므로 인접 셀간의 간섭이나 소자의 크기를 줄일 수 있기 때문에 투명하고 유연한 메모리 소자에 적용이 가능한 차세대 플래시 메모리로 기대되고 있다. 전하트랩형 플래시메모리는 정보를 저장하기 위하여 tunneling layer, trap layer, blocking layer의 3층으로 이루어진 게이트 절연막을 가진다. 전하트랩 플래시 메모리는 게이트 전압에 따라서 채널의 전자가 tunnel layer를 통해 trap layer에 주입되어 정보를 기억하게 되는데, trap layer에 주입된 전자가 다시 채널로 빠져나가는 charge loss 현상이 큰 문제점으로 지적된다. 따라서 tunnel layer의 막질향상을 위한 다양한 열처리 방법들이 제시되고 있으며, 기존의 CTA (conventional thermal annealing) 방식은 상대적으로 높은 온도와 긴 열처리 시간을 가지고, RTA (rapid thermal annealing) 방식은 매우 높은 열처리 온도를 필요로 하기 때문에 플라스틱, 유리와 같은 다양한 기판에 적용이 어렵다. 따라서 본 연구에서는 기존의 열처리 방식보다 에너지 전달 효율이 높고, 저온공정 및 열처리 시간을 단축시킬 수 있는 마이크로웨이브 열처리(microwave irradiation, MWI)를 도입하였다. Tunneling layer, trap layer, blocking layer를 가지는 MOS capacitor 구조의 전하트랩형 플래시 메모리를 제작하여 CTA, RTA, MWI 처리를 실시한 다음, 전기적 특성을 평가하였다. 그 결과, 마이크로웨이브 열처리를 실시한 메모리 소자는 CTA 처리한 소자와 거의 동등한 정도의 우수한 전기적인 특성을 나타내는 것을 확인하였다. 따라서, MWI를 이용하면 tunnel layer의 막질을 향상시킬 뿐만 아니라, thermal budget을 크게 줄일 수 있어 차세대 투명하고 유연한 메모리 소자 제작에 큰 기여를 할 것으로 예상한다.

• Journal of Information Management
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• v.38 no.1
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• pp.141-160
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• 2007

Many contents produced and provided as development of information technology on the internet. Especially discussion that collecting and storing of digital information resources, is expanded as growing dependence on academic information of research workers. Open Access is a new paradigm of information distribution that is opposite concept of high price distribution academic information. It is an OAI system that is intended to collect and automate open access data in good order. This paper constructs stOAI based on OAI that is a science and technology information providing system. This system provides international academic journal free of charge that collect and store through OAI protocol in OA(Open Access) of yesKISTI(science and technology information portal service). Also, It provides automate and centralize science technology information, that KISTI has, to external institution as a standard type.