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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

  • Received : 2013.05.13
  • Accepted : 2013.07.01
  • Published : 2013.09.30
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Abstract

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

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References

  1. C. Rossel, G.I. Meijer, D. Bremaud and D. Widmer, J. Appl. Phys. 90, 2892(2001) https://doi.org/10.1063/1.1389522
  2. G. Meijer, I.U. Staub, M. Janousch, S.L. Johnson, B. Delley and T. Neisius, Phys. Rev. B 72, 155102(2005) https://doi.org/10.1103/PhysRevB.72.155102
  3. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, H. Kawasaki, M.Y. Tokura, T. Kanno and H. Adachi, Phys. Rev. B 70, 224403(2004) https://doi.org/10.1103/PhysRevB.70.224403
  4. A. Sawa, T. Fujii, M. Kawasaki and Y. Tokura, Appl. Phys. Lett. 88, 232112(2006) https://doi.org/10.1063/1.2211147
  5. B. T. Phan, T. Choi, and J. Lee, J. Korean Phys. Soc. 51, 664(2007). https://doi.org/10.3938/jkps.51.664
  6. B. T. Phan, T. Choi, and J. Lee, Integrated Ferroelectrics 96, 146(2008). https://doi.org/10.1080/10584580802101455
  7. B. T. Phan and J. Lee, Appl. Phys. Lett. 93, 222906(2008). https://doi.org/10.1063/1.3039072
  8. B. T. Phan, N. C. Kim, and J. Lee, J. Korean Phys. Soc. 54, 873(2009). https://doi.org/10.3938/jkps.54.873
  9. B. T. Phan and J. Lee, Appl. Phys. Lett. 94, 232102(2009). https://doi.org/10.1063/1.3151957
  10. Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, YanWang, Sen Zhang, Wentai Lian, Kangwei Zhang, MingWang, Hongwei Xie, Ming Liu, Appl. Phys. A. 102, 915(2011). https://doi.org/10.1007/s00339-011-6273-8
  11. Young Ho Do, June Sik Kwak and Jin Pyo Hong, Hyunsik Im, Bae Ho Park, J. Korean Phys. Soc. 5, 1009(2009).
  12. Xinman Chen, Guangheng Wu, and Dinghua Bao, Appl. Phys. Lett. 93, 093501(2008). https://doi.org/10.1063/1.2978158
  13. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature (London). 453, 80(2008). https://doi.org/10.1038/nature06932
  14. K. C. Kao and W. Huang, Electrical Transportin Solid (Pergamon, Oxford, U.K.), (1981).
  15. Lei Shi, Dashan Shang, Jirong Sun and Baogen Shen, Appl. Phys. Exp. 2, 101602(2009). https://doi.org/10.1143/APEX.2.101602
  16. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715(2005). https://doi.org/10.1063/1.2001146