• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.346-352
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• 2000

We investigated the oxidation behavior of poly $Si_{1-x}Ge_x$ films (X=0.15, 0.42) at $700^{\circ}C$ in wet oxidation ambients and analyzed the oxide by XPS, RBS, and cross-sectional TEM. In the case of poly $Si_{0.85}Ge_{0.15}$ films, $SiO_2$ was formed on the poly $Si_{1-x}Ge_x$ films and Ge was rejected from growing oxide, subsequently leading to the increase of Ge content. In the case of poly $Si_{0.58}Ge_{0.42}$ films, we found that $SiO_2-GeO_2$ were formed on the poly $Si_{1-x}Ge_x$ films due to high Ge content. Finally, we proposed the oxidation model of poly $Si_{1-x}Ge_x$ films.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1273-1275
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• 2005

The influence of oxygen plasma and octadecyltrichlorosilane (OTS) treatment of $SiO_2$ on the patterning of poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT:PSS) is presented. A significant difference in surface energies between plasma treated and OTS treated $SiO_2$ was noted. Such heterogeneous surface energy guides PEDOT:PSS to wet and spread on the wettable region and to dewet and retract from other regions.

• Journal of Powder Materials
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• v.27 no.2
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• pp.119-125
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• 2020

One of the promising candidates for accident-tolerant fuel (ATF), a ceramic microcell fuel, which can be distinguished by an unusual cell-like microstructure (UO₂ grain cell surrounded by a doped oxide cell wall), is being developed. This study deals with the microstructural observation of the constituent phases and the wetting behaviors of the cell wall materials in three kinds of ceramic microcell UO₂ pellets: Si-Ti-O (STO), Si-Cr-O (SCO), and Al-Si-Ti-O (ASTO). The chemical and physical states of the cell wall materials are estimated by HSC Chemistry and confirmed by experiment to be mixtures of Si-O and Ti-O for the STO; Si-O and Cr-O for SCO; and Si-O, Ti-O, and Al-Si-O for the ASTO. From their morphology at triple junctions, UO₂ grains appear to be wet by the Si-O or Al-Si-O rather than other oxides, providing a benefit on the capture-ability of the ceramic microcell cell wall. The wetting behavior can be explained by the relationships between the interface energy and the contact angle.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.928-934
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• 1996

Quantitative analysis each portland cement components was conducted by standard calibration method using X-ray fluorescence spectrometer. Standard sample and the unknown sample were prepared by fused cast bead method. In checking the errors of standard cement 227A372 the relative errors of constituents such as CaO, SiO2, Al2O3, Fe2O3, MgO and SrO were less than 1% and the relative errors of constituents such as So3, K2O, TiO2, Na2O P2O5, and Mn2O3 were less than 5% Sample preparation was mainly contributed to the errors. Compared with general wet chemical method the results of X-ray fluorescence analyses were more precise and accurate. Moreover it is possible to analyze precisely a little amount of the constituents such as SrO, Mn2O3 and P2O5 the analyses of which were very difficult using the wet chemical method.

• Fashion & Textile Research Journal
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• v.7 no.3
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• pp.327-332
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• 2005

The purpose of this study is to investigate the effect of chitosan treatment on the dyeing of cotton fabric specimens using loess as colorants. The wet pick up ratio of the chitosan acid solution, as well as the drying condition after the padding of the fabric specimens, was changed in order to study the loess uptake on the fabric. The average particle diameter of the loess was measured. Main components of the loess were $SiO_2$, $Al_2O_3$, and $Fe_2O_3$. By the chitosan treatment, the loess amount on the cotton fabric increased. 80% wet pick up ratio of the chitosan acid solution on the cotton fabric specimen allowed more stable and even adhesion of the loess on the fabric surface, compared to the cases of 100% and 120% wet pick up ratio.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Journal of Applied Biological Chemistry
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• v.42 no.4
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• pp.175-179
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• 1999

Grape seed oil was extracted using different preparatory treatments as follows: (1) grinding, (2) grinding and roasting, (3) grinding and wet- roasting, (4) grinding, roasting, and wet-roasting, and (5) grinding, wet-roasting, and wet-roasting. The highest antioxidant activity was obtained from the sample with the method (2). Initial states of oxidation were similar except method (1) that showed more oxidized state, being P.O.V.8. Acid values were observed in the range from 1.42 to 1.89. The lowest acid value was found as 1.42 in method (1) and those of others were somewhat higher, indicating that heating process of roasting produced some free fatty acids. From the results of sensory evaluation, the best odor and taste were obtained from the methods (2) and (3). Repetitive procedure of wet-roasting, like method 5, caused some loss of flavor components and decrease in the sensory evaluation score. Addition of grape seed oil (method 2) to soybean and perilla oil at the level of 20% retained considerable antioxidant activities as much as 4.3 and 5 times, respectively, than 100% soybean or perilla oil stored for 12 weeks. When soybean or perilla oil was mixed with 20% grape seed oils, P.O.V. decreased to half of that of unmixed oils.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.183-190
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• 2002

Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.