Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Direct Bonding of Si || SiO2/Si3N4 || Si Wafer Pairs With a Furnace

전기로를 이용한 Si || SiO2/Si3N4 || Si 이종기판쌍의 직접접합

  • Lee, Sang-Hyeon (Dept.of Materials Sciences & Engineering, University of Seoul) ;
  • Lee, Sang-Don (Dept.of Materials Sciences & Engineering, University of Seoul) ;
  • Seo, Tae-Yun (Dept.of Materials Sciences & Engineering, University of Seoul) ;
  • Song, O-Seong (Dept.of Materials Sciences & Engineering, University of Seoul)
  • 이상현 (서울시립대학교 재료공학과) ;
  • 이상돈 (서울시립대학교 재료공학과) ;
  • 서태윤 (서울시립대학교 재료공학과) ;
  • 송오성 (서울시립대학교 재료공학과)
  • Published : 2002.02.01
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Abstract

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

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References

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