• Journal of the Korean Society of Safety
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• v.5 no.1
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• pp.57-66
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• 1990

The purpose of this study is to investigate electrostatic charge condition and possibility of electrostatic hazards in case of putting on synthetic smocks and antistatic garments for the purpose of prevention of electrostatic hazards due to a human body electrical charge. It is shown in case of a synthetic smocks, electrostatic voltage by friction is about 2,900 (V), half life period is 12 second, and electrostatic charge is 1.4―1.8 ($\mu$ C). When putting on a synthetic smocks, electrostatic voltage is 2,500―2,800(V). When putting on a jumper of chemical fiber, electrostatic voltage is 8,000(V) . It is, therfore, possible to cause a electrostatic hazards. It is also shown in case of a antistatic garments, electrostatic voltage by friction is 87(V) ―280(V) (washing 90 times), half life period is 3―5 second, and electrostatic charge is 0.24―0.28($\mu$ C) which is much lower than 0.6($\mu$ C) limitation of fire and explosion occurance. When putting on a antistatic garments, electrostatic voltage is 10(V) ―125(V). In conclusion, it is shown when putting on a antistatic garments it is possible to prevent a electrostatic hazards such as fire or explosion due to human body, to prevent a destruction of semiconductor elements and capacity decline, and to prevent a misoperation of automation facilities and semiconductor electric and electronic products.

• Journal of IKEEE
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• v.24 no.4
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• pp.1172-1175
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• 2020

Automotive ECU integrates CPU core, IVN controller, memory interface, sensor interface, I/O interface, and so on. Current automotive ECUs are often developed with proprietary processor architectures. However, demends for standard processors such as ARM and RISC-V increase rapidly for saftware compatibility in autonomous vehicles and connected cars. In this paper, an automotive ECU is designed for parking assist system based on RISC-V with open instruction set architecture. It includes 32b RISC-V CPU core, IVN controllers such as CAN and LIN, memory interfaces such as ROM and SRAM, and I/O interfaces such as SPI, UART, and I2C. Fabricated in 65nm CMOS technology, its operating frequency, area, and gate count are 50MHz, 0.37㎟, and 55,310 gates, respectively.

• Journal of Ginseng Research
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• v.9 no.1
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• pp.9-14
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• 1985

The aerial parts, stem diameter, stem length, Petiole length, leaf length and leaf width were investigated to estimate coefficient of variability in ginseng at 2 to 4 years grown under the conventional and improved shadings. C.V values of characters such as stem length, petiole length, leaf length and leaf width were decreased with increasing the plant age, while that of steam diameter was increased. C.V. values of aerial part characters were higher in conventional shading than in improved shading, and the variance of c.v. was not significant when above 20 plants were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1038-1041
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• 2006

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.309-312
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• 2002

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

• Journal of the Korean Mathematical Society
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• v.39 no.5
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• pp.783-800
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• 2002

Let B denote the unit ball in $C^n$, and ν the normalized Lebesgue measure on B. For $\alpha$ > -1, define $dv_\alpha$(z) ＝ $c_\alpha$$(1-\midz\mid^2)^{\alpha}$dν(z), z $\in$ B. Here $c_\alpha$ is a positive constant such that $v_\alpha$(B) ＝ 1. Let H(B) denote the space of all holomorphic functions in B. For $p\geq1$, define the Bergman-Privalov space $(AN)^{p}(v_\alpha)$ by $(AN)^{p}(v_\alpha)$ = ${f\inH(B)$ : $\int_B{log(1+\midf\mid)}^pdv_\alpha\;<\;\infty}$ In this paper we prove that a function $f\inH(B)$ is in $(AN)^{p}$$(v_\alpha)$ if and only if $(1+\midf\mid)^{-2}{log(1+\midf\mid)}^{p-2}\mid\nablaf\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case 1＜p＜$\infty$, or $(1+\midf\mid)^{-2}\midf\mid^{-1}\mid{\nabla}f\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case p ＝ 1, where $nabla$f is the gradient of f with respect to the Bergman metric on B. This is an analogous result to the characterization of the Hardy spaces by M. Stoll [18] and that of the Bergman spaces by C. Ouyang-W. Yang-R. Zhao [13].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Korean Chemical Engineering Research
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• v.57 no.6
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• pp.891-897
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• 2019

In this study, heteropoly acid PVMo catalysts were supported on activated carbon with various composition of phosphoric acid ($H_3PO_4$), vanadium (V) pentoxide ($V_2O_5$) and molybdenum (VI) trioxide ($MoO_3$). Catalytic performance was examined at $140^{\circ}C$ for 1hour in vapor formaldehyde. XRD and BET analyses were carried with the catalysts before and after the reaction. Formaldehyde conversion was increased with decreasing Mo and $H_3PO_4$ content and increasing $V_2O_5$ content. Acidity of the catalysts was investigated with $NH_3-TPD$. Crystallinity of the catalysts was relatively low, and surface area was decreased after the reaction. In $NH_3-TPD$ result, the ratio of strong acid site corresponding to $NH_3$ desorption between $400^{\circ}C$ and $500^{\circ}C$ was increased by decreasing $MoO_3$ and $H_3PO_4$ content and increasing $V_2O_5$ content. Therefore, it was found that the strong acid site could affect the catalytic reactivity in vapor formaldehyde conversion.

• Journal of Environmental Science International
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• v.6 no.3
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• pp.225-229
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• 1997

A halophilic V. vulnificus is an estuarine microorganism that has been associated with fatal wound Infection and life-threatening septicemia. Hemolysin is defined as toxic substance produced by various species of bacteria Including V. vulnificus. Hemolysin from marine V. vulnificus was purified and the effect of pH, temperature. metal ion on the activity of hemolysin, and thermostability of hemolysin were tested in this study. Hemolysin iysed the sheep red blood cell and the optimum pH was 8.0, the optimum temperature was 4$0^{\circ}C$, and $K^+$ increased but $Mn^{2+}$ decreased the hemolyic activity of hemolysin, but hemolysin was unstable to heat.