Characteristics of porous 3C-SiC thins formed by anodization

양극 산화법으로 형성된 다공질 3C-SiC 막의 특성

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).