• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.352-358
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• 2014

We were investigated the stability through the electrochemical characteristics of saturated fatty acid(C12, C14, C16, C18) monolayer LB films by cyclic voltammetry. Saturated fatty acid monolayer LB films was deposited on the indium tin oxide(ITO) glass by the LB method. The electrochemical properties were measured by cyclic voltammetry with a three-electrode system in 0.1 N $NaClO_4$ solution. The measuring range was continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s were set. As a result, LB monolayer films of saturated fatty acid were appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient(D) of saturated fatty acid(C12, C14, C16, and C18) was calculated 22.231, 2.461, 7.114 and 2.371 ($cm^2s^{-1}{\times}10^{-4}$) in 0.1 N $NaClO_4$ solution, respectively.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.32 no.1
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• pp.7-15
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• 1996

Full scale experiment was carried out in the southern sea of Korea to compare some important factors tested in the model experiment. The results obtained can be summarized as follows ; 1. The changing aspect of mouth performance of the full scale net was almost coincided with the results obtained by the model experiment. The vertical opening(H) and the opening area(S) can be expressed as a function of the towing velocity(V) as H=48.78. $e^0.38V$(unit: m, k't) S= 1,443 .$e^-0.25V$(unit: $m^2V$, k't) 2. The changing aspect of working depth of the full scale net was almost coincided with the results obtained by the model experiment. The depth(D) can be expressed as a function of the towing velocity(V) and the warp length(L) as D=92.49.$V^1.37$(unit: m, k't, L= 150m) D= 12.07+0.32. L (unit: m, V=2k't) [)= - 7.90+0.22 . L (unit: m, V=3k't) 3. Some problems were found to operate A - type full scale net by common bottom pair trawlers. The problems can be summarized as follows; (1) Entangling of wing and square head ropes while net casting.(2) Man power needed and time spent for net hauling by common bottom trawlers increased considerably.( 3) Tearing of nettings caused by over -load of tension and entangling of net pendant while net hauling. To solve these problems, the trawlers are favorable to be equipped with variable pitch propeller and llet drum. While the net is favorable to be constructed with trifurcated net pendant in stead of quadrifurcated net pendant used at present.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.641-647
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• 2011

This paper describes a design and fabrication of SDLVA. The SDLVA operates 0.5~2.0 GHz with -70~0 dBm dynamic range. The SDLVA is consisted of 5-stage RF block, 2-stage detector block and summation circuit using clamping op-amp to improve video linearity. The result of measure, SDLVA of RF path has over 73 dB small-signal gain and 10.1~12.2 dBm saturation power. The video path has 25 mV/ dB${\pm}$1.0 mV and under ${\pm}$1.5 dB video linearity.

• Genomics & Informatics
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• v.21 no.3
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• pp.32.1-32.11
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• 2023

Resistance to anti-tuberculosis drugs, especially ethambutol (EMB), has been widely reported worldwide. EMB resistance is caused by mutations in the embB gene, which encodes the arabinosyl transferase enzyme. This study aimed to detect mutations in the embB gene of Mycobacterium tuberculosis from Papua and to evaluate their impact on the effectiveness of EMB. We analyzed 20 samples of M. tuberculosis culture that had undergone whole-genome sequencing, of which 19 samples were of sufficient quality for further bioinformatics analysis. Mutation analysis was performed using TBProfiler, which identified M306L, M306V, D1024N, and E378A mutations. In sample TB035, the M306L mutation was present along with E378A. The binding affinity of EMB to arabinosyl transferase was calculated using AutoDock Vina. The molecular docking results revealed that all mutants demonstrated an increased binding affinity to EMB compared to the native protein (-0.948 kcal/mol). The presence of the M306L mutation, when coexisting with E378A, resulted in a slight increase in binding affinity compared to the M306L mutation alone. The molecular dynamics simulation results indicated that the M306L, M306L + E378A, M306V, and E378A mutants decreased protein stability. Conversely, the D1024N mutant exhibited stability comparable to the native protein. In conclusion, this study suggests that the M306L, M306L + E378A, M306V, and E378A mutations may contribute to EMB resistance, while the D1024N mutation may be consistent with continued susceptibility to EMB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.136-140
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• 1992

The purpose of this research is to develop the lithium secondary battery. This paper describes the preparation, electrochemical properties of nontstoichiometric(NS)-$V_6O_{13}$ and characteristics of Li/$V_6O_{13}$ secondary battery. NS-$V_6O_{13}$ was prepared by thermal decomposition of $NH_4VO_3$ under Ar stream of 140ml/min~180ml/min flow rate. And then, this NS-$V_6O_{13}$ was used for cathode active material. Cathode sheet was prepared by compressing the composite of NS-$V_6O_{13}$, acetylene black(A.B) and teflon emulsion (T.E). Characteristics of the test cell are summarised as follows. Oxidation capacity of NS-$V_6O_{13}$ was about 20% less than its reduction capacity. A part of NS-$V_6O_{13}$ cathode active material showed irreversible reaction in early charge-discharge cycle. This phenomena seems to be caused by irreversible incoporation/discoporation of lithium cation to/from NS-$V_6O_{13}$ host. Discharge characteristics curve of Li/$V_6O_{13}$ cell showed 4 potential plateaus. Charge-discharge capacity was declined in the beginning of cycling and slowly increased in company with increasing of coulombic efficiency. Energy density per weight of $V_6O_{13}$ cathode material was as high as 522Wh/kg~765Wh/kg.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.22 no.1
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• pp.41-44
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• 1977

Production of haploids in vitro anther culture of Nicotiana tabacum L. was oriented in a large number on a chemically defined culture medium. The haploids were screened for T.M.V. resistance and the segregating ratio in F$_1$ were in good agreement with the expected ratio.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• Geophysics and Geophysical Exploration
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• v.17 no.1
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• pp.1-10
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• 2014

To reveal and classify site characteristics in densely populated areas in Chuncheon, Korea, Rayleigh-waves were recorded at 50 sites including four sites in the forest area using four 1-Hz velocity sensors and 24 4.5-Hz vertical geophones during the period of January 2011 to May 2013. Dispersion curves of the Rayleigh waves obtained by the extended spatial autocorrelation method were inverted to derive shear-wave velocity ($v_s$) models comprising 40 horizontal layers of 1-m thickness. Depths to weathered rocks ($D_b$), shear wave velocities of these basement rocks ($v_s^b$), average velocities of the overburden layer ($\bar{v}_s^s$), and the average velocity to a depth of 30 m ($v_s30$), were then derived from those models. The estimated values of $D_b$, $v_s^b$, $\bar{v}_s^s$, and $v_s30$ for 46 sites at lower altitudes were in the ranges of 5 to 29 m, 404 to 561 m/s, 208 to 375 ms/s, and 226 to 583 m/s, respectively. According to the Korean building code for seismic design, the estimated $v_s30$ indicates that the lower altitude areas in Chuncheon are classified as $S_C$ (very dense soil and soft rock) or $S_D$ (stiff soil). To determine adequate proxies for $v_s30$, we compared the computed values with land cover, lithology, topographic slope, and surface elevation at each of the measurement sites. Due to a weak correlation (r = 0.41) between $v_s30$ and elevation, the best proxy of them, applications of this proxy to Chuncheon of a relatively small area seem to be limited.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.6A
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• pp.634-639
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• 2006

In this paper an MMIC 2-stage power amplifier is designed and fabricated for 5GHz wireless LAN applications using $0.5{\mu}m$ gate length PHEMT transistors. The PHEMT gate width is optimized in order to meet the linearity and efficiency of the MMIC power amplifier. The $0.5{\mu}m\times600{\mu}m$ PHEMT for the drive stage and $0.5{\mu}m\times3000{\mu}m$ PHEMT for the amplification stage are the optimized sizes to achieve more than 25dBc of third order IMD at the power level of 3dB back-off from the input P1dB and more than 22dBm output power under a supply voltage of 3.3V. The two-stage MMIC power amplifier is designed to be used for the both of HIPERLAN/2 and IEEE 802.11a because of its broadband characteristics. The fabricated PHEMT MMIC power amplifier exhibits a 20.1dB linear power gain, a maximum 22dBm output power, a 24% power added efficiency under 3.3V supply voltage. The input and output on-chip matching circuits are included on a chip of $1400\times1200{\mu}m^2$.

• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.