• Communications of the Korean Mathematical Society
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• v.21 no.2
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• pp.261-272
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• 2006

In this paper, we define the sequence spaces: $[V,{\lambda},f,p]_0({\Delta}^r,E,u),\;[V,{\lambda},f,p]_1({\Delta}^r,E,u),\;[V,{\lambda},f,p]_{\infty}({\Delta}^r,E,u),\;S_{\lambda}({\Delta}^r,E,u),\;and\;S_{{\lambda}0}({\Delta}^r,E,u)$, where E is any Banach space, and u = ($u_k$) be any sequence such that $u_k\;{\neq}\;0$ for any k , examine them and give various properties and inclusion relations on these spaces. We also show that the space $S_{\lambda}({\Delta}^r, E, u)$ may be represented as a $[V,{\lambda}, f, p]_1({\Delta}^r, E, u)$ space. These are generalizations of those defined and studied by M. Et., Y. Altin and H. Altinok [7].

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.69-73
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• 2002

We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.197-204
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• 2021

This study investigated the smoke risk assessment of woods and plastics for construction materials, focusing on the smoke performance index-V (SPI-V), smoke growth index-V (SGI-V), and smoke risk index-VI (SRI-VI) according to a newly designed methodology. Spruce, Lauan, polymethylmethacrylate (PMMA), and polycarbonate (PC) were used for test pieces. Smoke characteristics of the materials were measured using a cone calorimeter (ISO 5660-1) equipment. The smoke performance index-V calculated after the combustion reaction was found to be 1.0 to 3.4 based on PMMA. Smoke risk by smoke performance index-V was increased in the order of PC, Spruce, Lauan and PMMA. Lauan and PMMA showed similar values. The smoke growth index-V was found to be 1.0 to 9.2 based on PMMA. Smoke risk by smoke growth index-V increased in the order of PMMA, PC, Spruce, and Lauan. COpeak production rates of all specimens were measured between 0.0021 to 0.0067 g/s. In conclusion, materials with a low smoke performance index-V and a high smoke growth index-V cause a high smoke risk from fire. Therefore, it is understood that the smoke risk from fire is high. It is collectively summarized by the smoke risk index-VI.

• Asian-Australasian Journal of Animal Sciences
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• v.14 no.5
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• pp.693-696
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• 2001

The effect of replacement of in vitro maturation medium completely with the buffalo follicular fluid (buFF) on in vitro oocyte maturation of buffalo oocytes was studied. 5 to 8 buffalo cumulus oocyte complexes were cultured in a single drop with each of the eight media studied i.e., M199+steer serum (10% v/v), M199+steer serum (10% v/v)+PMSG, M199+buFF (10% v/v), M199+buFF (10% v/v)+PMSG, M199+buFF (50% v/v), M199+buFF (50% v/v)+ PMSG, buFF (100%) and buFF+PMSG at $39^{\circ}C$ and 5% $CO_2$ in air for 24 h. Supplementation of M199 with Steer serum alone resulted in IVM rate of 35% only. When the above medium was supplemented with PMSG, the maturation rate rallied to 82%. Significant increase in the maturation rates were observed when M199 was supplemented with increasing levels of buFF. A further increase in the maturation rate was also obtained when PMSG was incorporated into the medium of M199 supplemented with buFF. The rate of maturation was to the tune of 91% when oocytes were matured in buFF alone which was increased non significantly on the addition of PMSG. Highest maturation rate (97%) obtained with M199+buFF (50%v/v)+PMSG did not differ significantly from that obtained by either M199+buFF (10%v/v)+PMSG or buFF+PMSG. It is suggested that buFF alone without any supplementation can form the effective in vitro maturation medium for buffalo oocytes.

• Journal of Korean Medicine for Obesity Research
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• v.6 no.2
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• pp.95-104
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• 2006

Objectives : This study was performed to assess the effect onf abdominal obesity treatment on changes in abdominal subcutaneous and visceral fat. Methods : The study was conducted on 61 abdominally obese patients (13 men and 48 women). Measures of body weight, waist circumference, abdominal subcutaneous and visceral fat area by CT scan, and V/S ratio (Viscero-subcutaneous fat ratio) were acquired before and after Kirindiet therapy. Paired t-test and Wilcoxon signed rank tests were used to est the effects of teatment. Results : Following a mean of 68 days of treatment, waist circumference (-15%), abdominal total fat (-40%), subcutaneous fat (-37.9%), visceral fat (-47.8%) and V/S ratio (-11.1%) were significantly reduced (p<0.05). The change in V/S ratio in female patients was not statistically significant (p=0.491) whereas the change in the V/S ratio in male patients was significant indicating a greater loss of visceral fat (p=0.017). Please check that my changes reflect what the study found Conclusions : The reduction in visceral fat was greater than for subcutaneous fat in male patients but not for female patients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.7
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.33-38
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• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.472-472
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• 2000

An analog signal conditioner using fuzzy logic technique, which has multiple-input and multiple-output terminals, is proposed in this paper. The proposed signal conditioner can be employed to linearly translate the level of signals to a standard voltage signal (1-5V) and convert the form of signals to a standard current signal (4-20mA). The implementation method based on the use of a commercial 8-bit microcontroller, the analog-to-digital (A/D) converters, the digital-to-analog (D/A) converters and the voltage-to-current (V/I) converter. The simulation result and the experimental results are presented, which further confirm the feasibility of this approach.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.