• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.11 no.2
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• pp.290-296
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• 2000

Objective：This study aims to investigate the cognitive characteristics of clinically referred children with symptoms of inattention, cach as having ADHD, tic disorder, and emotional disorder. Methods：65 boys(38 with ADHD, 17 with Tic disorder, and 10 with Emotional disorder) were individually assessed using the KEDI-WISC(FIQ, VIQ, PIQ) and T.O.V.A.(errors of omission, errors of commission, reaction time, variability, anticipatory response, multiple response), and the results of those tests were analyzed. Results：There was significant difference among three diagnostic groups of the VIQ of KEDIWISC and the reaction time of T.O.V.A. after the correction of the effect of age difference. Conclusion：The findings suggest that the reaction time of T.O.V.A. might be the useful variable to differentiate the ADHD from other psychiatric disorders and the effect of age and IQ difference should be considered carefully to diagnose in clinical setting.

• Journal of the Earthquake Engineering Society of Korea
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• v.10 no.2 s.48
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• pp.51-62
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• 2006

In the companion paper (I-Problem Statements of the Current Seismic Design Code), the current Korean seismic design code is required to be modified considering site characteristics in Korea for the reliable estimation of site amplification. In this paper, three site classification methods based on the mean shear wave velocity of the top 30m $V_{S30}$, fundamental site periods $(T_G)$ and bedrock depth were investigated and compared with each other to determine the best classification system. Not enough of a difference in the standard deviation of site coefficients $(F_a\;and\;F_v)$ to determine the best system, and neither is the difference between the average spectral accelerations and the design response spectrum of each system. However, the amplification range of RRS values based on $T_G$ were definitely concentrated on a narrow band than other classification system. It means that sites which have a similar behavior during earthquake will be classified as the same site category at the site classification system based on $T_G$. The regression curves between site coefficients and $T_G$ described the effect of soil non linearity well as the rock shaking intensity increases than the current method based on $V_{S30}$. Furthermore, it is unambiguous to determine sue category based on $T_G$ when the site investigation is performed to shallower depth less than 30m, whereas the current $V_{S30}$ is usually calculated fallaciously by extrapolating the $V_s$ of bedrock to 30m. From the results of this study, new site classification system based on $T_G$ was recommended for legions of shallow bedrock depth in Korea.

• Journal of Korean Society on Water Environment
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• v.23 no.1
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• pp.122-130
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• 2007

This study was conducted to evaluate water treatment characteristics according to vegetated wetland(V) and open water(O) arrangements in free water surface constructed wetland. Three pilot-scale wetlands, V-V, O-V and V-O, were built and operated. $BOD_5$ was a slightly reduced at all the arrangements because the influent concentration was so low as background concentration of constructed wetlands. While T-N and T-P removal efficiency showed higher than 50% for all cases. The O-V arrangement showed the highest removal efficiency: 20% for $BOD_5$, 56% for SS, 59% for T-N and 72% for T-P. Effluent concentration of the O-V were significantly low compared with those from the V-O. O-V arrangement would be beneficial in the light of pollutant removal efficiency as well as construction cost.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.224-227
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• 2013

본 연구에서는 S/D이 n+/n+로 구성된 CNT-MOSFETs, 금속으로 이루어진 SB-CNTFETs와 p+/n+로 구성된 CNT-TFETs에 대한 각각의 $I_d-V_g$ 특성과 포텐셜 프로파일을 확인하였다. 그리고 각 소자의 특성 및 특징을 연구하고, 이 중에서 BTB에 가장 큰 영향을 받는 CNT-TFETs의 특성을 $V_{DS}$, 분자 비대칭성과 $T_{ox}$에 따른 특성 변화를 연구하였다. 그 결과 예상과 다르게 오히려 작은 $V_{DS}$와 큰 $E_g$을 가질 때, 향상된 SS를 가진다는 것을 확인 할 수 있었다. 특히, (7,0) CNT-TFETs에서 비록 $I_d$는 작지만, SS를 57mV/dec까지 개선할 수 있었다. 또한, $T_{ox}$를 얇게 하면, 비록 60 mV/dec 이하의 결과는 보여주지 못했지만, SS와 Ion 모두 개선할 수 있음을 확인할 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.147-150
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• 2009

We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.72-80
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• 1993

We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.7 no.1
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• pp.21-29
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• 1993

In this paper, we studied the 50% flashover voltage of lightening impulse which affect the most serious damages on the insulation of the electric power network system. Also its V -t characteristics and corona process phenomena of pure $SF_6, N_2, SF_6-N_2$mixtures under the circumstances of nonuniform field gap are researched. Comparing the characteristics of pure $SF_6$ with that of $SF_6, N_2$mixtures, we discussed that breakdown processes and $SF_6, N_2$ mixture's application to economics.As a results, 50% flashover voltage of $SF_6$ 50% - $N_2$ 50% for impulse voltage is higher then that of 80% of pure SF6, measured data and calculated data by equal area law are almost equal from the points of view of V-t characteristics. Therefore, it has been known that $SF_6$ 50% - $N_2$ 50% mixtures can be used as an economic constitution gas of pure $SF_6$, it is verified that corona processes from Lichtenberg figure.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.234-235
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• 2013

PV cell model은 PV simulator를 제작하거나 시뮬레이션 Software를 통하여 PV 발전시스템을 분석하기 위하여 필요하다. PV cell의 I-V 특성곡선은 PV cell의 특성을 결정짓는 중요한 요소이며, 전기적으로 다이오드정수($I_o$, $v_t$)와 광전류원($I_{ph}$) 그리고 직렬저항($R_s$) 및 션트저항($R_{sh}$)으로 모델링 가능하다. 광 전류원은 일사량에 비례하여 그 값을 추정할 수 있으나 나머지 변수인 다이오드정수($I_o$, $v_t$)와 직렬저항($R_s$) 및 션트저항($R_{sh}$)은 제조사 데이터시트에서 제공하는 3개의 대표적인 운전점인 개방회로 전압($V_{oc}$), 단락회로 전류($I_{sc}$), 그리고 최대출력에서의 전압/전류($V_{MPP}/I_{MPP}$)를 기초로 수학적으로 해를 구하여야만 한다. 본 논문에서는 저자가 제안하는 K-알고리즘의 수학적 도출 과정과 수치해석적 특성을 고찰한다.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.194-199
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• 1997

When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.