• Korean Journal of Materials Research
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• v.13 no.3
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.163-163
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• 2015

본 연구는 금속 캐리어 소재상에 화학 동도금(Chemical Copper)으로 형성된 극박 동박 표면 및 석출막의 특성을 평가하기 위하여 다양한 진공 분석장비들을 활용하여 평가한 결과이다. 연구에 사용된 극박 동박은 현재 캐리어박 선점률이 높은 M, J, Y사의 제품이다. 최상층 구리 표면에서 조직, 조성, 표면조도를 평가하였고, 계면 평가에서는 copper layer 및 nodule layer, adhesion layer, anti-corrosion layer, release layer, substrate에서의 물성 및 특성 정밀평가 결과 각 특성치 및 구조는 Cr, Zn, Ni, Co, Cr계 thermal anti layer임의 확인이 가능하였다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.09a
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• pp.193-197
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• 2005

This paper presents a method by which multiple holes of ultra small size can be punched simultaneously. Silicon wafers were used to fabricate punching die. Workpiece used in the present investigation were the rolled pure copper of $3{\mu}m$ in thickness and CP titanium of $1.5{\mu}m$ in thickness. The metal foils were punched with the dies and arrays of circular and rectangular holes were made. The diameter of holes ranges from $2-10{\mu}m$. The process set-up is similar to that of the flexible rubber pad forming or Guerin process. Arrays of holes were punched successfully in one step forming. The punched holes were examined in terms of their dimensions, surface qualities, and potential defect. The effects of the die hole dimension on ultra small size hole formation of the thin foil were discussed. The optimum process condition such as proper die shape and diameter-thickness ratio (d/t) were also discussed. The results in this paper show that the present method can be successfully applied to the fabrication of ultra small size hole array in a one step operation.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.3
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• pp.109-114
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• 2016

This study presents the optimal hardness range for a coated layer of a workpiece when the diamond tool cuts the corner-cube pattern on the coated plates using an ultra-precision diamond-turning machine. Two kinds of coated plates, which have the hardness range of 211~328 Vickers hardness, are used on the first experiments. The form accuracy for the corner-cube pattern could be achieved through the following experiments using the accumulated thin copper plates in second experiments, having optimal 265~275 Vickers hardness based on the basic first experiments without tool wear. When the number of machining adjustments was increased to seven times, having machining depth was reduced successively in second experiment, a fine surface could be achieved without tool wear.

• Journal of the Korean Applied Science and Technology
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• v.13 no.3
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• pp.105-109
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• 1996

It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as $NO_2$ and also chemically and thermally stable, Therefore, lots of MPcs have been studied for the potential chemical sensor for $NO_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, ultra-thin films of octa(2-ethylhexyloxy)copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS absortion spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to $NO_2$ gas as a function of film thickness and temperature were discussed.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.747-754
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• 2008

Recently, the requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. Therefore, it is important to examine the surface state of substrate depending on the processing parameter during the anodic oxidation. This study investigated the effect of the various electrolyte concentrations on anodizing of titanium anode prior to copper electrodeposition. Different surface morphology of anodized titanium was obtained at different electrolytic concentration 0.5 M to 3.0 M. In addition, the effect that the surfaces and the electrical characteristics on the electrodeposited copper layer was observed. In this study, surface anodized in the group containing 0.5M $H_2SO_4$ shows more uniform copper crystals with low surface roughness. the surface roughness and sheet resistance for 0.5M $H_2SO_4$ group were $1.353{\mu}m$ and $0.104m{\Omega}/sq$, respectively.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.32-37
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• 2012

Lead frame which has a high thermal conductivity and high mechanical strength is one of core technology for ultra-thin electronics such as LED lead frames, memory devices of semiconductors, smart phone, PDA, tablet PC, notebook PC etc. In this paper, we fabricated a Cu/STS/Cu 3-layered clad metal for lead frame packaging materials and characterized the mechanical properties and thermal conductive properties of the clad metal lead frame material. The clad metal lead frame material has a comparable thermal conductivity to typical copper alloy lead frame materials and has a reinforced mechanical tensile strength by 1.6 times to typical pure copper lead frame materials. The thermal conductivity and mechanical tensile strength of the Cu/STS/Cu clad metal are 284.35 W/m K and $52.78kg/mm^2$, respectively.

• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.202-211
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• 2018

In this work, Fe-Pd alloy films have been electrodeposited on different substrates using an electrolyte containing $[Pd(NH_3)_4]^{2+}$ (0.02 M) and $[Fe-Citrate]^{2+}$ (0.2 M). The influences of substrate and overpotential on chemical composition, nucleation and growth kinetics as well as the electrodeposited films morphology have been investigated using energy dispersive X-ray spectroscopy (EDS), current-time transients, scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) patterns. In all substrates - brass, copper and sputtered fluorine doped tin oxide on glass (FTO/glass) - Fe content of the electrodeposited alloys increases by increasing the overpotential. Also the cathodic current efficiency is low due to high rate of $H_2$ co-reduction. Regarding the chronoamperometry current-time transients, it has been demonstrated that the nucleation mechanism is instantaneous with a typical three dimensional (3D) diffusion-controlled growth in the case of brass and copper substrates; while for FTO, the growth mode changes to 3D progressive. At a constant overpotential, the calculated number of active nucleation sites for metallic substrates is much higher than that of FTO/glass; however by increasing the overpotential, the number of active nucleation sites increases. The SEM micrographs as well as the XRD patterns reveal the formation of Fe-Pd alloy thin films with nanostructure arrangement and ultra-fine grains.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.