• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1244_1245
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• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.22-27
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• 2002

We investigated the crystal structure, resistivity, and chemical states change of the tungsten nitride $(WN_x)$ films prepared by reactive sputtering method with various $N_2$ flow ratios. Crystal structures of $WN_x$ films deposited at the $N_2$ flow ratios of 20%, 40%, and 60% were bcc $\beta$-W, amorphous, and fcc $W_2$N, respectively. Surface roughness of $WN_x$ film was smallest when the $WN_x$ film is amorphous. After the air exposure of $WN_x$ films, $WO_3$ layer was formed at the surface of all samples. Both the nitrogen content of $WN_x$ film and the binding energy of W $4f_{7/2}$ peaks increased with increasing $N_2$ flow ratio. However, after $Ar^+$ ion etching, the shift of W $4f_{7/2}$ peaks was not observed with $N_2$ flow ratio due to the amorphization of the $WN_x$ film surface. The resistivity of $WN_x$ films increased with increasing $N_2$ flow ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.45-45
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• 1998

• Proceedings of the Korea Air Pollution Research Association Conference
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• 1994.04a
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• pp.109-112
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• 1994

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.386-386
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• 2013

반도체 소자의 소형화, 고집적화로 박막의 다층화 및 선폭의 감소 등의 복잡한 제조 공정이 불가피하고, 따라서 공정 중 실리콘 웨이퍼와 금속 박막사이의 확산을 방지하기 위한 많은 연구가 이루어지고 있다. 하지만 현재까지의 연구는 확산방지막의 nano-mechanics 특성 분석에 대한 연구는 전무하다. 본 논문에서 tungsten (W)을 주 물질로, nitrogen (N)을 첨가한 확산방지막을 질소 유량을 2.5, 5, 7.5, 10 sccm으로 변화시켜가면서 rf magnetron sputter 방법으로 tungsten-nitride (W-N) 박막을 증착하였다. 박막의 기본 물성인 증착율, 비저항 및 결정학적 특성을 ${\beta}$-ray, 4-point probe, X-ray diffraction (XRD)를 이용하여 측정하였고, 측정결과 증착 중 질소 유량이 증가할수록 W-N 박막의 비저항은 증가하였고 반대로 증착율과 결정성은 감소하였다. 이는 기존의 연구 결과와 비교하여 일치한 결과로 증착된 박막이 신뢰성을 가짐을 확인하였다. 이후 가장 관심사인 nano-mechanics 특성은 nano-indenter를 이용하여 측정하였다. 측정 결과 시료는 증착 중 질소 유량이 2.5 sccm인 시료를 기준으로 5 sccm 포함된 박막에서 load force-depth 그래프가 급격히 변화하는 경향을 나타내었고, 표면강도(surface hardness)는 10.07 GPa에서 15.55 GPa로 증가하였다. 이후 질소 유량이 7.5 sccm과 10 sccm에서는 12.65 GPa와 12.77 GPa로 질소 유량이 5 sccm 포함된 박막보다 상대적으로 감소하였다. 이는 박막내 결정상으로 존재하는 질소와 비정질 상태로 존재하는 질소의 비율에 의한 것이고, 압축력에 기인하는 스트레스 증가로 판단된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.146-146
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.101-101
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• 1997

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.27-27
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• 2004