• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.758-763
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.71-74
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• 2003

A vertical trench electrode type EST has been proposed in this paper. The proposed device considerably improve the snap-back effect which leads to a lot of problem of device applications. In this paper, the vertical dual gate Emitter Switched Thyristor(EST) with trench electrode has been proposed for improving snap-back effect. It is observed that the forward blocking voltage of the proposed device is 800V. The conventional EST of the same size were no more than 633V. Because the proposed device was constructed of trench-type electrode, the electric field moved toward trench-oxide layer, and the punch through breakdown of the proposed EST is occurred at latest.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.19-22
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.183-184
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• 2005

In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.65-71
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• 2007

For chip-stack package applications, Cu filling characteristics into trench vias of $75{\sim}10\;{\mu}m$ width and 3 mm length were investigated with variations of the electroplating current density and the speed of a rotating disc electrode (RDE). Cu filling characteristics into trench vias were improved with increasing the RDE speed. There was a Nernst relationship between half width of trench vias of Cu filling ratio higher than 95% and the minimum RDE speed, and the half width of trenches with 95% Cu filling ratio was linearly proportional to the reciprocal of root of the minimum RED speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.342-345
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• 2002

A new lateral trench electrode IGBT with p+ diverter was Proposed to suppress latch-up of LTIGBT. The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEIGBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occurred at an anode current density of 540A/$\textrm{cm}^2$. And the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. When the gate voltage is applied 12V, the forward conduction currents of the Proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90mA and 70mA, respectively, at the same breakdown voltage of 150V.