The Change of Electrical Characteristics in the EST with Trench Electrodes
트랜치 전극을 가진 Emitter Switched Thyristor의 전기적 특성 변화
- Kim, Dae-Won (Korea Univ.) ;
- Kim, Dae-Jong (Korea Univ.) ;
- Sung, Man-Young (Korea Univ.) ;
-
Kang, Ey-Goo
(Far East Univ.)
;
-
Lee, Dong-Hee
(Suwon Univ.)
- Published : 2003.11.01
Abstract
A vertical trench electrode type EST has been proposed in this paper. The proposed device considerably improve the snap-back effect which leads to a lot of problem of device applications. In this paper, the vertical dual gate Emitter Switched Thyristor(EST) with trench electrode has been proposed for improving snap-back effect. It is observed that the forward blocking voltage of the proposed device is 800V. The conventional EST of the same size were no more than 633V. Because the proposed device was constructed of trench-type electrode, the electric field moved toward trench-oxide layer, and the punch through breakdown of the proposed EST is occurred at latest.
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