Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.11a
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- Pages.19-22
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- 2003
The Improvement in the Forward Blocking Characteristics of Lateral Trench Electrode Power MOSFET by using Local Doping
로컬 도핑을 이용한 수평형 트렌치 전극 파워 MOSFET의 순방향 블로킹특성 개선
- Kim, Dae-Jong (Korea Univ.) ;
- Kim, Dae-Won (Korea Univ.) ;
- Sung, Man-Young (Korea Univ.) ;
- Rhie, Dong-Hee (Suwon Univ.) ;
- Kang, Ey-Goo (Far East Univ.)
- Published : 2003.11.13
Abstract
In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.
Keywords
- Lateral Trench Electrode Power MOSFET;
- Trench electrode;
- Local doping;
- Punch through breakdown;
- Forward blocking voltage