Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode

트랜치 에미터 전극을 이용한 수직형 NPI 트랜치 게이트 IGBT의 전기적 특성 향상 연구

  • 이종석 (고려대학교 전기공학과) ;
  • 강이구 (극동대학교 컴퓨터정보표준화학부) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2006.10.01
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Abstract

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

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References

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