• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.501-506
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• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.4
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• pp.418-425
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• 1998

In this paper. determination method of turn-off angle in the SRM drives is proposed to maintain the high torque at a any turn-on angle, which is realized by using selHuning control method, During the sampling time. a number of P pulses from encoder are checked by using one-chip microprocessor. and compared with pre-checked a number of pulses A After calculating difference between two data, the turn-off angle moves forward or backward direction by the self-tuning m method, As repeating such process, the optimal turn-off angle is determined and the maximum torque is maintained T Though experiments, it is observed that motor speed is almost maintained if turn-off angle is adjusted automatically by s selHuning method when turn-ηn angle is changed.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.7
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• pp.339-350
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• 2002

Pole arcs, turn-on angle, and turn-off angle are major design factors, which affects Switched Reluctance Motor's torque performance. If these design factors are considered independently, the enhancement of SRM performance is restricted. Therefore, we need to consider pole arcs, turn-on angle and turn-off angle at the same time, when we design SR. In this paper, we analyze how these factors affect to torque ripple and average torque by using dynamic Finite Element Method(FEM) with derive circuit and present the good design results according to the various speeds. Especially, we formulate turn-on and turn-off angle from a voltage equation and present effective design range.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.69-73
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• 2010

We propose a method to enhance the response time of a twisted nematic liquid crystal (TN-LC) cell using an anisotropic polymer. Polymer networks are formed by the phase separation between a LC and a UV-curable polymer. A TN-LC cell is exposed to UV light after the mixture of LC and anisotropic polymer is injected into the TN-LC cell. As a result, turn-off time of a TN-LC cell can be decreased remarkably without any loss of the transmittance. The turn-off time of a TN-LC cell with pure LC was 16 ms, but those of polymer networked TN-LC cells were 12, 11, and 9 ms when the concentration of the polymer was 3, 5, and 10 wt%, respectively. Moreover, by virtue of the polymer network, the backflow effect and the delay time generated during the turn-off process disappeared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• 전기의세계
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• v.17 no.2
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• pp.6-10
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• 1968

The conversive limitation of electric energy for the thyristor inverter is analysed under the boundary conditions which the term of a negative inverse voltage is longer than that of the turn off time of the thyristor under commutation. It is clear that the maximum electric energy conversion is affected by the turn off time of the thyristor, the reactance of a commutation reactor, the capacity of a commutation condenser and the voltage of Direct current source. It is useful for design the thyrister invertor and the motor speed control to apply the above conclusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.351-354
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• 2001

In this paper, we present self-tuning control of switched reluctance motor for maximum torque with phase current and shaft position sensor. Determination method of turn-on/off angle is realized by using self-tuning control method. During the sampling time, micro-controller checks the number of pulse from encoder and compare with the number of pre-checked pulse. After micro-controller calculates between two data, it moves forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, the turn-on angle automatically moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moved automatically to obtain the maximum torque. The experimental results are presented to validate the self-tuning algorithm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.