• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.120-124
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• 2016

In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.374-377
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• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.76.2-76.2
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.20.1-20.1
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.566-571
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• 2017

A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.