한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Transparent ZnO based thin film transistors fabricated at room temperature with high-k dielectric $Gd_2O_3$ gate insulators

  • Tsai, Jung-Ruey (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Li, Chi-Shiau (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Tsai, Shang-Yu (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Chen, Jyun-Ning (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Chien, Po-Hsiu (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Feng, Wen-Sheng (Institute of Electro-Optical Engineering, Chang Gung University) ;
  • Liu, Kou-Chen (Institute of Electro-Optical Engineering, Chang Gung University)
  • Published : 2009.10.12
Download PDF
⟨ Previous Next ⟩

Abstract

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

Keywords