• 한국광학회지
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• 제2권4호
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• pp.209-213
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• 1991

최근들어 극초단 광학펄스를 생성하고 증폭하는 기술의 발달로 인하여 시분해 레이저 분광학에 많은 영향을 끼치게 되었다. 그 중에서도 응용성이 넓은 순간흡수분광학장치를 본 연구실에서 개발하였다. 이 기술은 고출력 레이저 펄스를 이용하여 white light continuum pulse를 생성시켜 이를 조사빔으로 이용하고, pump pulse는 원래 상태의 레이저를 이용하는 것이다. 순간흡수율 변화를 여러 파장에서 측정가능하도록 photodiode array를 이용하였으며, pump와 probe pulse의 시간차이에 의한 순간흡수율 변화를 색소의 일종인 DDI를 이용하여 측정하였다.

• 한국자동차공학회논문집
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• 제23권6호
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• pp.623-632
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• 2015

This study proposes a control strategy of the common rail pressure with a fuel injection limitation algorithm to reduce particulate matter (PM) emissions under transient states. The proposed control strategy consists of two parts: injection quantity limitation and rail pressure adaptation. The injection limitation algorithm determines the maximum allowable fuel injection quantity to avoid rich combustion under transient states. The fuel injection quantity is limited by predicting the burned gas rate after combustion; however, the reduced injection quantity leads to deterioration of engine torque. The common rail pressure adaptation strategy is designed to compensate for the reduced engine torque. An increase of the rail pressure under transient states contributes to enhancement of the engine torque as well as reduction of PM emissions by promoting atomization of the injected fuel. The proposed control strategy is validated through engine experiments. The rail pressure adaptation reduced the PM emission by 5-10% and enhanced the engine torque up to 2.5%.

• 대한전기학회논문지
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• 제32권2호
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• pp.59-64
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• 1983

This paper deals with the transient energy method of transient stability analysis of multi-machine power system by improving the transfer conductance, the kinetic energy and the critical transient energy. The tranfer conductance is considered more correctly, the generators of system are seperated to two states (critical and the rest state)and the correction term of critical transient energy (to reference point) is added. This analysis is performed by digital computer simulation and the application of this method to two model systems has shown its superiority to other available methods.

• 한국자동차공학회논문집
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• 제15권6호
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• pp.102-107
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• 2007

A fast response $CO_2$ ($fCO_2$) analyzer for real-time measurement of carbon dioxide concentration during transient states of internal combustion engines has been developed. This analyzer uses non-dispersive infrared absorption (NDIR) technique for measuring $CO_2$ concentration and Kalman filter for removing noise components from output signals. The analyzer has good linearity, repeatability and drift with a response time of 11 ms; it is sufficiently fast to detect $CO_2$ concentration during transient states of internal combustion engines. The $fCO_2$ analyzer was used to measure transient $CO_2$ concentration of exhaust gas of the SI engine with a standard gas analyzer, and the signal of the $fCO_2$ analyzer was compared to that of the standard gas analyzer. The two concentrations were well matched during the steady state, and the $fCO_2$ analyzer could measure the variations of $CO_2$ concentration during the transient state.

• 한국기계가공학회지
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• 제8권1호
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• pp.18-23
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• 2009

This study analyzes the thermal stress at automotive radiators on steady and transient states. The maximum displacement is shown at the lower corner of upper tank with the value of 0.51mm. The displacement becomes smaller at the center of radiator and it becomes larger at this edge. The maximum thermal stress with the value of 62 MPa is shown at the contact between upper tank and cooling plate. Thermal maximum stress with the transient state at the elapsed time of 10 second is lower than that at steady state as much as 0.7%.

• International Journal of Naval Architecture and Ocean Engineering
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• 제12권1호
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• pp.387-398
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• 2020

In the design stage of the very large container ships, some methodologies for the whipping effects have been developed, but most of them are based on single sea state. We developed a methodology that considers multiple sea states. Fluid-structure Interaction (FSI) analyses with one dimensional structural model were carried out to capture slamming-induced transient whipping behaviors. Because of the nature of random phases of the applied wave spectra, the required period for entire FSI analyses was determined from the convergence study where the whipping effect became stable. Low pass filtering was applied to the transient whipping responses to obtain the hull girder bending moment processes. Peak counting method for the filtered whipping responses was used to obtain collection of the vertical bending moment peaks. The whipping effect from this new method is compared with that from based on single sea state approach. The efficiency and advantage of the new methodology are presented.

• Transactions on Control, Automation and Systems Engineering
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• 제2권1호
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• pp.40-46
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• 2000

In this paper, a transient identification based on a Hidden Markov Model (HMM) has been suggested and evaluated experimentally for the classification of transients in the dynamic process. The transient can be identified by its unique time dependent patterns related to the principal variables. The HMM, a double stochastic process, can be applied to transient identification which is a spatial and temporal classification problem under a statistical pattern recognition framework. The HMM is created for each transient from a set of training data by the maximum-likelihood estimation method. The transient identification is determined by calculating which model has the highest probability for the given test data. Several experimental tests have been performed with normalization methods, clustering algorithms, and a number of states in HMM. Several experimental tests have been performed including superimposing random noise, adding systematic error, and untrained transients. The proposed real-time transient identification system has many advantages, however, there are still a lot of problems that should be solved to apply to a real dynamic process. Further efforts are being made to improve the system performance and robustness to demonstrate reliability and accuracy to the required level.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• 한국결정성장학회지
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• 제10권6호
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• pp.412-417
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• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.