• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.11
• /
• pp.50-58
• /
• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.12S
• /
• pp.1205-1209
• /
• 2003

We investigated the effects of calcination temperatures on the sintering behaviors and microwave dielectric Properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system. Highly densified samples were obtained at the sintering temperatures below 100$0^{\circ}C$ with additions of 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$. From the examination of the existing phases and microstructures before and after sintering of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system which is calcined at the various temperatures ranging from 80$0^{\circ}C$ to 100$0^{\circ}C$, it was found that higher Q${\times}$ $f_{o}$ values were obtained when unreacted phases in calcined body were reduced. When calcined at 100$0^{\circ}C$ and sintered at 90$0^{\circ}C$, it consists of hexagonal as. a main phase with uniform microstructure and exhibits Q${\times}$ $f_{o}$ value of 42,000 GHz and dielectric constant of 22. 22. 22.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.11
• /
• pp.1161-1164
• /
• 1998

The catalytic transformation of sterically bulky tertiary stannane n-Bu3SnH by the Cp2MCl2/Red-Al (M=Ti, Zr, Hf) and M(CO)6 (M=Cr, Mo, W) catalysts yielded two kinds of catenated products: one is a cross-linked polystannane as minor product, and the other is hexabutyldistannane (n-Bu3Sn)2 as major product. The distannane was produced by simple dehydrocoupling of n-Bu3SnH, whereas the cross-linked polystannane could be obtained via redistribution/dehydrocoupling combination process of n-Bu3SnH. The redistribution/dehydrocoupling combination process may initially produce a low-molecular-weight oligostannane with partial backbone Sn-H bonds which could then undergo an extensive cross-linking reaction of backbone Sn-H bonds, resulting in the formation of an insoluble polystannane.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.56-63
• /
• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Journal of the Korean Ceramic Society
• /
• v.54 no.1
• /
• pp.23-27
• /
• 2017

A series of $CeO_2-TiO_2$ composite samples with different Ce/Ti molar ratios were prepared by the paper template. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to confirm a face-centered cubic lattice of $CeO_2$ with Ce/Ti =8:2 or 9:1 and a two phase mixture of anatase titania and face-centered cubic ceria with Ce/Ti = 7 : 3. The field emission scanning electron microscopy (FESEM) results suggest that the products are micron braid structures consisting of fibers with diameters in a range of $1-6{\mu}m$ and lengths of several hundred micrometers. $N_2$ absorption-desorption testing shows that the composite at Ce/Ti molar fraction of 8 : 2 has the largest BET surface area (about $81m^2{\cdot}g^{-1}$). Compared to the pure $CeO_2$ sample, the composites show superior catalytic activity for $H_2$ reduction and CO oxidation. For the micron braid structure $CeO_2-TiO_2$ composite (Ce/Ti = 8 : 2), due to the high surface area and the solid solution with appropriate $Ti^{4+}$ incorporation, the CO conversion at about $280^{\circ}C$ was above 50% and at $400^{\circ}C$ was 100%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.8
• /
• pp.1-6
• /
• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• Korean Journal of Materials Research
• /
• v.16 no.8
• /
• pp.511-515
• /
• 2006

The dispersion hardened $Cu-TiB_2$ composites are a promising candidate for applications as electrical contact materials. The $Cu-TiB_2$ composites for electrical contact materials can reduce material cost and resource consumption caused by wear, due to their good mechanical and electrical properties. In this study, we investigated the wear phenomenon for $Cu-TiB_2$ composites fabricated with hot extrusion, by varying particle sizes and volume fractions of $TiB_2$. The wear tests were performed under the dry sliding condition with a fixed total sliding distance of 40 m. The contact loads at a constant speed of 3.5 Hz were 20, 40, 60, and 80 N. The friction coefficients and wear losses were measured during wear tests. Worn surfaces and wear debris after wear tests were investigated using the scanning electron microscope and the optical microscope. The microstructures of interface between Cu matrix and $TiB_2$ particle before and after wear tests were studied by the transmission electron microscope.

• Korean Journal of Materials Research
• /
• v.13 no.1
• /
• pp.43-47
• /
• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.39-42
• /
• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.537-541
• /
• 2003

The a-Si:H TFTs using ferroelectric of SrTiO$_3$, as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric is better than SiO$_2$, SiN. Ferroelectric increases ON-current, decreases threshold voltage of TFT and also breakdown characteristics. The a-Si:H deposited by PECVD shows absorption band peaks at wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / and 876 $cm^{-1}$ / according to FTIR measurement. Wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / are caused by stretching and rocking mode SiH1. The wavenumber of weaker band, 876 $cm^{-1}$ / is due to SiH$_2$ vibration mode. The a-SiN:H has optical bandgap of 2.61 eV, refractive index of 1.8 - 2.0 and resistivity of 10$^{11}$ - 10$^{15}$ aim respectively. Insulating characteristics of ferroelectric is excellent because dielectric constant of ferroelectric is about 60 - 100 and breakdown strength is over 1 MV/cm. TFT using ferroelectric has channel length of 8 - 20 $\mu$m and channel width of 80 - 200 $\mu$m. And it shows drain current of 3 $\mu$A at 20 gate voltages, Ion/Ioff ratio of 10$^{5}$ - 10$^{6}$ and Vth of 4 - 5 volts.