Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04b
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- Pages.39-42
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- 2000
The Effect of $N_2O$ treatment and Cap Oxide in the PECVD $SiO_xN_y$ Process for Anti-reflective Coating
ARC를 위한 PECVD $SiO_xN_y$ 공정에서 $N_2O$ 처리 및 cap 산화막의 영향
- Published : 2000.04.28
Abstract
As gate dimensions continue to shrink below
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