• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1197-1201
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• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.599-604
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• 2013

In this study, Ti added Mn-Cu mixed oxide catalysts were prepared by a co-precipitation method and used for the low temperature (< $200^{\circ}C$) selective catalytic reduction (SCR) of NOx with $NH_3$. Physicochemical properties of these catalysts were characterized by BET, XRD, XPS, and TPD. Mn-Cu mixed oxide catalysts were found to be amorphous with a large surface and they showed high SCR activity. Experimental results showed that the addition of $TiO_2$ to Mn-Cu oxide enhanced the SCR activity and $N_2$ selectivity. Ti addition led to the chemically adsorbed oxygen species that promoted the oxidation of NO to $NO_2$ and increased the number of $NH_3$ adsorbed-sites such as $Mn^{3+}$.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.185-189
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• 2012

A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between -0.2 and 1 $V_{Ag/AgCl}$ in 0.1 M NaOH solution. Capacitances of native oxide films ($C_{ox,na}$) grown naturally and capacitances of anodic oxide films ($C_{ox,an}$) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use $C_{ox,na}$ for the surface area measurement of Ti specimen. $1/C_{ox,na}$ and $1/C_{ox,an}$ appeared to be linearly proportional to OCP and applied potential ($E_{app}$), with proportional constants of 0.086 and 0.051 $uF^{-1}\;V^{-1}$, respectively. The $C_{ox,na}$ also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and $8.5{\mu}F\;cm^{-2}$ at -0.45 $V_{Ag/AgCl}$ and -0.25 $V_{Ag/AgCl}$ of OCPs, respectively, in 0.1 M NaOH solution. This linear relationship between $C_{ox,na}$ and surface area is suggested to be applicable for the measurement of real surface area of Ti specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.485-488
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• 2004

1M, 2M 황산망간 수용액에서 25회 dipping하여 대기중 $450^{\circ}C$에서 1시간동안 열분해법으로 Mn 산화물을 형성시켜 Mn $oxide/IrO_2/Ti$ 전극을 제조하였다. 제조된 Mn $oxide/IrO_2/Ti$ 전극은 XRD를 통하여 MnO의 결정구조를 가지는 것을 확인하였다. 또한 전극 표면은 열분해법으로 발생하는 가스에 의해 미소 균열이 형성되어 있었다. dipping 횟수가 증가할수록 피복되는 Mn 산화물의 무게는 감소하였고, 이것은 $450^{\circ}C$에서의 계속적인 열처리에 의해 열분해되어 제거되는 가스로 인해 무게가 감소됨을 알 수 있었다. 황산망간 수용액의 농도가 높으면 형성되는 Mn 산화물의 무게도 증가하였다. 황산망간 수용액에서 25회까지 dipping을 한 후 전기비저항의 변화는 초기 Mn 산화물이 형성되는 경우에는 비저항이 증가하다가, 일정 횟수 이상에서는 감소함을 알 수 있었다. 또한 황산망간 수용액의 농도가 클수록 비저항이 증가하는 것으로 나타났다.

• Corrosion Science and Technology
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• v.22 no.3
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• pp.193-200
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• 2023

Titanium alloy (grade-4) is commonly used in industrial and medical applications. To improve its corrosion resistance and biocompatibility for medical use, it is necessary to form a titanium oxide film. In this study, the morphology of the oxide film formed by anodizing Ti-grade 4 using different electrolytes was analyzed. Wetting properties before and after surface modification with SAM coating were also observed. Electrolytes used were categorized as A, B, and C. Electrolyte A consisted of 0.3 M oxalic acid and ethylene glycol. Electrolyte B consisted of 0.1 M NH₄F and 0.1 M H₂O in ethylene glycol. Electrolyte C consisted of 0.07 M NH₄F and 1 M H₂O in ethylene glycol. Samples B and C exhibited a porous structure, while sample A formed a thickest oxide film with a droplet-like structure. AFM analysis and contact angle measurements showed that sample A with the highest roughness exhibited the best hydrophilicity. After surface modification with SAM coating, it displayed superior hydrophobicity. Despite having the thickest oxide film, sample A showed the lowest insulation resistance due to its irregular structure. On the other hand, sample C with a thick and regular porous oxide film demonstrated the highest insulation resistance.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Journal of Technologic Dentistry
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• v.26 no.1
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• pp.97-104
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• 2004

A new Ti-10Ta-10Nb alloy has designed and examined some possibility of forming more passive oxide film by oxidation treatment which is closely related to corrosion resistance and biocompatibility. Ti-6Al-4V and Ti-10Ta-10Nb alloys were prepared by consumable vacuum arc melting and homogenized at 1050$^{\circ}C$ for 24hours. Alloy specimens were oxidized at the temperature range of 400 to 750$^{\circ}C$ for 30minutes, and the oxide films on Ti alloys were analysed by optical microscope, SEM, XPS and TGA. Cytotoxicity test was performed in MTT assay treated L929 fibroblast cell culture by indirect method. It is found out that the oxide film on Ti-10Ta-10Nb alloy is denser and thinner compared to Ti-6Al-4V alloy. The weight gain during the oxidation was increased rapidly at the temperature above 650$^{\circ}C$ for Ti-6Al-4V alloy and above 700$^{\circ}C$ for Ti-10Ta-10Nb alloy respectively. It was analysed that the passive film of the Ti alloys consisted of TiO2 through X-ray photoelectron spectroscopy (XPS) analysis. It is found out by cytotoxicity test that moderate oxidation treatment lowers cell toxicity, and Ti-10Ta-10Nb alloy showed better result compared to Ti-6Al-4V alloy.