• 한국산업융합학회 논문집
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• 제22권6호
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• 한국고분자학회지:고분자과학과기술
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• 제18권6호
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• pp.542-548
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• 2007

• Journal of Welding and Joining
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• 제13권2호
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• pp.82-95
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• 1995

This paper discusses distribution of thermal stress, strain at near the joint and investigates the reliability of solder joints of electronic devices on a printed circuit board. As Electronic devices are composed of different materials, thermal stresses generate at near the interface, such as solder joints and interface between lC device and lead frame pad due to the differences of thermal expansion coefficients, As results of thermal stress, strain, micro crack often occurs thermal fatigue fracture at the interface of different materials, The initiation and propagation of micro crack depend on the environmental conditions, such as storage temperature and thermal cycling. Finally, this paper experimentally shows a way to suppress micro cracks by using Fe-Ni alloy clad lead frame, and investigates crack and thermal fatigue fracture of TSOP(Thin small outline package) type on printed circuit board.

• 마이크로전자및패키징학회지
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• 제31권1호
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• pp.7-15
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• 2024

유연신축성 전자 디바이스의 다기능화, 소형화 및 고출력화 추세에 따라 우수한 열 전달 특성을 갖춘 재료나 구조가 이슈로 부상하고 있다. 기존의 열계면 소재는 급격한 구부림, 비틀림, 신축 등을 겪어야 하는 유연신축성 전자 디바이스의 방열 요구성능을 충족시키지 못한다. 이러한 문제를 해결하기 위하여 높은 열전도성과 신축성을 동시에 갖는 열계면 소재 개발이 요구된다. 본 논문에서는 Liquid metal, Carbon, Ceramic 기반 신축성 열계면 소재의 연구동향을 살펴보고 열적, 기계적 특성 향상을 위한 효과적 전략을 알아보고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• 대한기계학회논문집
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• 제18권7호
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• pp.1705-1712
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• 1994

Hilbert problems are derived to evaluate thermal stress intensity factors for a partially insulated crack subjected to vertically uniform heat flow in infinite bonded dissimilar materials. In case of fully insulated crack surface, the present solutions of thermal stress intensity factors are reduced into the same as the previous results. For the homogeneous material, mode II thermal stress intensity factor only exists. However, in the bonded dissimilar materials, both mode I and II thermal stress intensity factors are obtained. Specially, in this case, mode II thermal stress intensity factor is dominent. Also, thermal stress intensity factors are strongly influenced by the material properties. Thermal stress intensity factors decrease when the degree of insulation decreases.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.631-635
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• 1996

Stress singularities appear at the interface edge in dissimilar materials also under thermal loading. First, these singularities then an interface meets a free side surface with an arbitrary angle are studied for a two-dimensional problem. The singular properties under thermal loading are made clear and the concrete singular field are obtained. Secondly, the dependence of stress field on elastic constants in axisymmetric dissimilar materials are. discussed. That is, it is shown that three elastic constants mutually independent are necessary, in general, to characterize the stress field of axisymmetric dissimilar materials, although Dunders' parameters defined for two-dimensional dissimilar materials have been often applied correspondingly also to axisymmetric problems.

• 한국재료학회지
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• 제26권10호
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• pp.542-548
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• 2016

The influence of NiCrAlY bond coating on the adhesion properties of an Fe thermal coating sprayed on an Al substrate was investigated. By applying a bond coat, an adhesion strength of 21MPa was obtained, which was higher than the 15.5MPa strength of the coating without the bond coat. Formation of cracks at the interface of the bond coat and the Al substrate was suppressed by applying the bond coat. Microstructural analysis of the coating interface using EBSD and TEM indicated that the dominant bonding mechanism was mechanical interlocking. Mechanical interlocking without crack defects in the coating interface may improve the adhesion strength of the coating. In conclusion, the use of an NiCrAlY bond coat is an effective method of improving the adhesion properties of thermal sprayed Fe coatings on Al substrates.