• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.332-340
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• 2023

Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.616-621
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• 2022

Numerical simulation is a good way to predict the conversion efficiency of solar cells without a direct experimentation and to achieve low cost and high efficiency through optimizing each step of solar cell fabrication. TOPCon industrial solar cells fabricated with n-type silicon wafers on a larger area have achieved a higher efficiency than p-type TOPCon solar cells. Electrical and optical losses of the front surface are the main factors limiting the efficiency of the solar cell. In this work, an optimization of boron-doped emitter surface and front electrodes through numerical simulation using "Griddler" is reported. Through the analysis of the results of simulation, it was confirmed that the emitter sheet resistance of 150 Ω/sq along the front electrodes having a finger width of 20 ㎛, and the number of finger lines ~130 for silicon wafer of M6 size is an optimized technology for the front emitter surface of the n-type TOPCon solar cells that can be developed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.233-240
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• 2023

p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiO_x structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiO_x layer achieves the highest implied open-circuit voltage (iV_oc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiO_x) and poly-silicon layer (poly-Si), as well as the advancement of the SiO_x and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.26-37
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• 2002

The Parks'landscape lighting at night influences people's visual comfort, safety and so on. So, this study aims to suggest new lighting plan in Han Kang(river) Parks for improving the city beautification in Seoul. Therefore, field survey was performed in two parks. And The lighting fixtures ware investigated, and horizontal illuminations were measured by Topcon-IM5 to compare with the Korea Standard Some findings and problems were discussed. As a result, to improve the lighting quantity and duality of the concept, light source lighting fixtures and installation were suggested, and the scenes of suggested lighting plan ware indicated by computer graphics.

• Journal of Korean Society for Geospatial Information Science
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• v.18 no.2
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• pp.13-20
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• 2010

Currently, NGII(National Geographic Information Institute) provides VRS(Virtual Reference System) service using 44 CORS(Continuously Operating Reference Stations). Since the VRS provides high-precision coordinate in a short time, the users and applications are expected to be rapidly increasing. The accuracy analysis on the VRS service, however, was not sufficiently performed yet. Therefore, in this study, the VRS data is acquired from various circumstances and its accuracy is analyzed. According to analysis, it was concluded that the VRS could be applied to public control point survey. Furthermore, it was found that the PQ(Position Quality) which represents variance of estimated coordinates rather than GDOP(Geometric Dilution of Precision) is more relevant as a factor to determine the accuracy of coordinates. Based on the analysis of data from four manufacturers (TRIMBLE, MAGELLAN, LECIA, TOPCON), it was confirmed that the standard deviations better than 3cm. Therefore, VRS Survey apply to public control point survey.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.2
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• pp.225-229
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• 2014

Purpose: The study was to analyze the correlation between kinetic visual acuity (KVA), visual acuity(static visual angle, SVA) and contrast sensitivity. Methods: Ninety-nine undergraduate students studying Ophthalmic Optics were fully corrected by the Topcon CV-3000 Phoropter. The contrast sensitivity was measured for the participants under the photopic condition ($100cd/m^2$) with Vector Vision CSV-1000E at 2.5 meter, while KVA was measured with KOWA AS-4A. The participants were classified into three groups L, M and H depending on the KVA (0.1~0.3, 0.31~0.6 and greater than 0.61, respectively) and were analyzed whether there was the correlation between the contrast sensitivity, visual acuity and refractive error. Results: The KVA was correlated with the contrast sensitivity for 3 cpd (r=0.26), for 6 cpd (r=0.48), for 12 cpd (r=0.38) and 18 cpd (r=0.47). Except for the low frequency of 3 cpd, they all were higher than the one of the SVA and the KVA (r = -0.37). The contrast sensitivity for 3, 6, 12 and 18 cpd was 59.41, 92.22, 38.41 and 14.39 in the group L, respectively. The contrast sensitivity in the group M was 66.03, 108.78, 53.51 and 19.20 and the one in the group H was 70.90, 146.10, 62.90 and 25.33 for 3, 6, 12 and 18 cpd, respectively. Conclusions: The correlation of the contrast sensitivity and the KVA was higher than the one of the contrast sensitivity and the SVA. It can be assumed that the contrast sensitivity will be high if the KVA is high, except for the case for low spatial frequency.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.1
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• pp.1-5
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• 2011

Purpose: Measurement of the horizontal and vertical prism diopter was investigated which was occurred due to distance differences between the optical inter-centeral distance (OC) and the interpupillary distance (PD) of the prescribed glasses. Methods: We surveyed 96 subjects (192 eyes) at the average age of 21.56 years old. The PD was measured by using the PD measurement system (DONGYANG PD-85, Korea), and the OC of the glasses was measured by using the projective peak refractive power measurement system (TOPCON CL-200, Japan). The OH value was measured by using Penlight and the PD ruler. Results: The PD which had been measured by the PD system and the OC of the glasses revealed 78.1% of differences. 62.5% of the objects were base-in value prescribed glasses; 58.3% were out of permissible error. Only 8 subject showed concurrence between the prescribed glasses and the OH value, and 82.3% of the objects were induced vertical prism of over 1 (prism diopter). Conclusions: In order to improve the vision function of people who wear glasses, it is necessary to advance the accuracy of PD, OH measurement and making glasses as well.