New & Renewable Energy (신재생에너지)

Korean Society for New and Renewable Energy (한국신·재생에너지학회)
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Passivating Contact Properties based on SiOX/poly-Si Thin Film Deposition Process for High-efficiency TOPCon Solar Cells

고효율 TOPCon 태양전지의 SiOX/poly-Si박막 형성 기법과 passivating contact 특성

  • Kim, Sungheon (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University) ;
  • Kim, Taeyong (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Jeong, Sungjin (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Cha, Yewon (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Hongrae (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Park, Somin (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Ju, Minkyu (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2021.11.25
  • Accepted : 2022.02.07
  • Published : 2022.03.25
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Abstract

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiOX/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

Keywords

Acknowledgement

이 연구는 2021년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원에 의한 연구(n-TOPCon 효율 최적화 pn 접합 형성을 위한 붕소(boron) 도핑(doping) 장비기술개발 소재부품/개발패 키지형 사업, 20016058), 2014년도 산업통상자원부 '산업혁신인재성장지원사업'의 재원으로 한국산업기술진흥원(KIAT)의 지원을 받아 수행된 연구임(2021년 차세대 디스플레이 공정·장비·소재 전문인력 양성사업, 과제번호 : P0012453).

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