• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.332-340
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• 2023

Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.

• Current Photovoltaic Research
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• 제9권4호
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• Current Photovoltaic Research
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• 제9권3호
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.616-621
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• 2022

Numerical simulation is a good way to predict the conversion efficiency of solar cells without a direct experimentation and to achieve low cost and high efficiency through optimizing each step of solar cell fabrication. TOPCon industrial solar cells fabricated with n-type silicon wafers on a larger area have achieved a higher efficiency than p-type TOPCon solar cells. Electrical and optical losses of the front surface are the main factors limiting the efficiency of the solar cell. In this work, an optimization of boron-doped emitter surface and front electrodes through numerical simulation using "Griddler" is reported. Through the analysis of the results of simulation, it was confirmed that the emitter sheet resistance of 150 Ω/sq along the front electrodes having a finger width of 20 ㎛, and the number of finger lines ~130 for silicon wafer of M6 size is an optimized technology for the front emitter surface of the n-type TOPCon solar cells that can be developed.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.233-240
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• 2023

p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiO_x structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiO_x layer achieves the highest implied open-circuit voltage (iV_oc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiO_x) and poly-silicon layer (poly-Si), as well as the advancement of the SiO_x and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

• 신재생에너지
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• 제18권1호
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• 조명전기설비학회논문지
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• 제16권2호
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• pp.26-37
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• 2002

경관조명은 야간의 도시를 더욱 쾌적하고, 안전하며, 여유있는 활동을 보장할 수 있어 그 중요성이 더욱 강조되고 있다. 본 연구는 한강의 대표적 경관계획요소인 한강의 시민공원들을 조명계획 함으로써 도시미관을 향상시키는 데 그 목적이 있다. 이를 위하여, 선택되어진 시민공원들을 대상으로 현장조사가 이루어졌으며, 조도는 Topcon-IM5를 이용하여 측정하여 기준 조도값과 비교하였다. 그리고 몇 몇 문제점에 대하여 토의하였다. 이러한 조사를 바탕으로, 밤 시간대에 공원의 미관과 안전을 향상시키기 위하여 새로운 조명디자인개념, 광원, 조명기구의 위치 등을 계획하고, 컴퓨터 프로그램을 활용하여 이미지 연출을 제안하였다.

• 대한공간정보학회지
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• 제18권2호
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• pp.13-20
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• 2010

현재 국토지리정보원은 전국 44개의 상시관측소를 이용하여 VRS 서비스를 제공하고 있으며 이를 이용하여 짧은 시간 동안 취득된 자료의 처리를 통해 높은 위치정밀도의 획득이 가능하다. 그러나 공공기준점 측량을 위한 VRS 측량의 가용성 분석은 미비한 상태이다. 따라서 본 연구에서는 다양한 환경에서 데이터를 취득하여 공공기준점 측량에 대해 적용하기 위한 VRS 측량의 정확도를 분석하였다. 그 결과 85%의 데이터가 4cm 이내의 수평오차가 나타남으로써 VRS 측량에 적용할 수 있다고 판단되었고 좌표의 정확도를 판별하는 인자로 GDOP(Geometric Dilution of Precision)보다는 추정된 좌표의 분산을 나타내는 PQ(Position Quality)를 이용하는 것이 효율적임을 알수 있었다. 또한, 현재 대표적인 VRS 장비회사인 TRIMBLE, MAGELLAN, LEICA, TOPCON의 장비의 정밀도를 비교분석한 결과 수평위치의 표준편차가 3cm 미만으로 나타났으며, 회사 장비 별 정밀도는 비슷한 것으로 확인 되었으며, 공공기준점 측량에 VRS 측량을 적용하여도 무방하다고 사료된다.

• 한국안광학회지
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• 제19권2호
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• pp.225-229
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• 2014

목적: 동적시력(Kinetic visual acuity, KVA), 대비감도(Contrast sensitivity), 정지시력(정지시각 Static visual angle, SVA) 등의 상관관계를 분석해 보고자 하였다. 방법: 안경광학과 재학생 99명(남 51명, 여 48명)을 대상으로 Topcon CV-3000 포롭터를 이용하여 완전교정 후 명소시($100cd/m^2$)상태에서 Vector Vision CSV-1000E를 이용하여 2.5 m 거리에서 대비감도를 측정하였다. 또한 KVA 측정장치(KOWA AS-4A)을 이용하여 동적시력을 측정하였다. KVA 정도에 따라, 0.1~0.3 L그룹, 0.31~0.60 M그룹, 0.61 이상을 H그룹으로 분류하고 대비감도, 정지시각, 굴절이상량 등의 상관관계를 분석하였다. 결과: KVA와 대비감도의 상관성은 3 cpd r=0.26, 6 cpd r = 0.48, 12 cpd r=0.38, 18 cpd r=0.47로 저주파수인 3 cpd를 제외하고, 모두 KVA와 SVA의 상관성 r = -0.37 보다 높았다. 주파수별 대비감도는 3, 6, 12, 18 cpd에서 각각 L그룹은 59.41, 92.22, 38.41, 14.39, M그룹은 66.03, 108.78, 53.51, 19.20, H그룹은 70.90, 146.10, 62.90, 25.33이였다. 결론: KVA와 대비감도의 상관성이 SVA보다 높으며, KVA가 높은 경우 저주파수 이외에서는 대체로 대비감도가 높은 것을 알 수 있었다.

• 한국안광학회지
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• 제16권1호
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• pp.1-5
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• 2011

목적: 본 연구는 조제 가공된 안경의 광학적 중심간 거리와 동공간거리의 일치여부를 알아보고, 안경의 광학적 중심높이와 OH의 일치여부를 분석하여 수평, 수직 차이에 의한 유발 프리즘을 검사하고자 하였다. 방법: 평균 나이21.56세의 96명(192안)을 대상으로 동공거리계(DONGYANG PD-85, Korea)로 동공간거리를 측정하였고, 안경의 광학적 중심간 거리는 투영식 정점 굴절력계(TOPCON CL-200, Japan)로 측정하였다. OH는 펜라이트와 PD자를 이용하여 측정하였다. 마지막으로 현재 착용하고 있는 안경의 착용기간을 조사하였다. 결과: 동공거리계로 측정한 동공간 거리와 투영식 정점 굴절력계로 측정한 안경렌즈의 광학적 중심간 거리는 78.1%(150안)에서 일치하지 않았고, 62.5%(60명)에서 기저내방으로 안경이 조제되었으며, 이 중 58.3%(56명)가 허용오차 범위 외에 있었다. 조제 가공된 안경과 피검사자의 OH를 비교한 결과 수직 유발 프리즘은 단 8명(8.3%)에서만이 유발되지 않았으며, 79명(82.3%)이 1 이상의 프리즘이 유발되었다. 조제후 7개월이 지난 경우에는 통계적인 차이는 없었으나 수직 OH의 차이가 더 컸다. 결론: 안경 착용자에게 양안 시기능을 보다 좋고 편안하게 향상시켜주기 위하여 PD와 OH 측정 및 조제에 더욱 정확성을 기울여야 할 것이다. 정확한 조제 및 가공과 함께 안경원의 정기방문 또한 필요할 것이다.