• Title/Summary/Keyword: TBE

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Development of Natural Seasoning using Desalinated Tuna Boiled Extract (탈염된 참치 자숙액을 이용한 천연조미료 개발)

  • KIM Se-Kwon;BYUN Hee-Guk;JEON You-Jin;JOO Dong-Sik;KIM Jong-Bae
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.32 no.1
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    • pp.75-82
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    • 1999
  • The hydrolysate of desalinated tuna boiled extract (TBE) were prepared by continuous hydrolysis of TBE using a membrane reactor. TBE and tuna boiled extract hydrolysate (TBEH) were isolated depending on molecular weights. The major molecular weight distributions of TBEH-l0K, TBEH-5K and TBEH-lK were 9,800Da, 3,000Da and 990Da, respectively. The amounts of nucleotides and their related compounds of TBE were 3.47 $\mu$mole/g AMP, 23.75 $\mu$mole/g IMP, 9.07 $\mu$mole/g inosine and 1.89 $\mu$mole/g hypoxanthine. Total content of amino acids having desirable taste (glycine, glutamic acid, alanine, proline, aspartic acid, serine) was about $63\%$ of total amino acid from TBE and about $62\%$ from TBEH. The natural seasoninings were prepared with TBE and TBEH. From the results of sensory evaluations, complex seasoning containing TBEH-1K was almost equal to the shellfish complex seasoning obtained from the market. The mixed sauce which was made by mixing of $50\%$ TBEH sauce and $50\%$ fermented soy sauce was similar to the tradition soybean sauce in product quality and it showed the possibility to be used for the substitute product for acid hydrolyzed soysauce.

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Purification of type B Staphylococcal enterotoxin (Staphylococcus aureus에서 생성된 Enterotoxin B의 분리 및 정제)

  • 이정희;신현길;김종배;한재수
    • Journal of Food Hygiene and Safety
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    • v.3 no.2
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    • pp.75-81
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    • 1988
  • Various methods such as lel-mtration on Sephadex G-SO, 75, 100 Sephacry, and Ultro gel, and lon-exchanle chromatoaraphy on Amberilte and carboxymethyl (CM)-cellulose, and Fast Protein liquid Chromatolraphy (FPLC) were applied for the purification of enterotoxin B from Staphylococcus aureus ATCC 14458 and compared one another. lon-exchanle chromatography on Amberllte resin was good enough to remove non-entrotoxln materials in culture, convlnient to use and fast although tbe purity was less tban 70%. However, CM-cellulose showed to be better purity and yield tban those of Amberilte resin. The yields of these two resins for ion-exchange cbromatograpby were about 70% and 75%, respectively. When the gel-filtration methods on Sepbadex G-50, 75, 100, Sepbacryl, and Ultro lei were applied, the purities were about 90%. FPLC was found to be tbe most efficient metbod in terms of purity (96%) and speed. For the purification of sample with large volume, particularly, tbe combined metbod, gel-mtration after Amberlite can be also used efficiently. Tbe purified toxin was found to be identical to type B enterotoxin used for reference standard by Oucbterlony immunodiffusion test.

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Heat Treatment Effects of Staggered Tunnel Barrier (Si3N4 / HfAlO) for Non-volatile Memory Application

  • Jo, Won-Ju;Lee, Se-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.196-197
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    • 2010
  • NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$$450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

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Detection of Adulteration of Sesame Oil(I) Chromatographic Determination for Soybean Oil, Linseed Oil and Perilla Oil in Sesame Oil (참기름의 진위 판정에 관하여 - (I) 참기름중의 대두유, 아마인유 및 들깨기름의 검출)

  • 천석조;임영희;송인상;노정배
    • Journal of Food Hygiene and Safety
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    • v.3 no.2
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    • pp.59-63
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    • 1988
  • A technique of high-performance liquid chromatography (HPLC) was applied to tbe detection and estimation for composition of linseed oil, perilla oil and soybean oil in edible sesame oil. Tbe triglycerides were separated into five peaks in sesame 011, seven peaks in linseed oil, perilla oil and soybean oil by HPLC. From the resulls separated by HPLC on the basis of PN (partition number), tbese observations indicate tbat adullerants linseed oil, perilla oil and soybean oil in sesame oil for the ratio of minimum 4%, respectively can be detected. As a resull, it was suggested that tbe use of HPLC can provide more detailed Information concerning adulteration of sesame all.

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Surface roughness characteristics of the super-polished (Bowl-feed 연마기법에 의한 초연마 반사경 기판의 표면 거칠기 특성)

  • 조민식
    • Korean Journal of Optics and Photonics
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    • v.11 no.5
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    • pp.312-316
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    • 2000
  • Vole lllvesnguted the surface roughness charactenstics of the super~polished mirror substrate made by bowl-feed technique. in comparison with the case of fresh-feed technique. Fresh-feed techmque and bowl-feed technique were tried lor substrate surface polishing, and the surface roughne~s was estimated by phase-measunng interferometry. l11e slilface roughness of the substrate after bowl-feed procedure was Improved approxImately three times as fine as that after fresh-feed procedure. and tbe nns roughness of less than $0.5\AA$ and up to $0.3\AA$ at its best was obtained for the bowl-feed procedure. The surface roughness changes by (he bowl-feed technique. compated with tbe fresh-feeclleclmique. were analyzed witb tbe help of both 1 -dimensional roughne,>s profde and rougbness amplItude spect1U1l1 of the polished substrate, whIch ascertained that the final polishing partIcle size of the bowl-feed ptocedure was much smaller than that of the fresh~feed procedure. edure.

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UML Modeling and COM based Runtime Updating of Component (UML 모델링과 COM을 기반으로 한 컴포넌트의 런타임 갱신)

  • Jung, Han-Shik;Kim, Il-Kon;Kim, Hwang-Soo
    • Journal of KIISE:Computing Practices and Letters
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    • v.6 no.6
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    • pp.601-607
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    • 2000
  • Runtime updating of component is a technology which is replacing component used in program with newly implemented component without terminating running program using old one. Recently, it is trend that softwares are developed by reusing the existing component. When we use these components to softwares which have to offer consecutive services, they must be terminated or shutdown to update component with newly implemented one. In this case, users who are offered services of software have to request them one more time and sometimes lose informations which they use. Therefore, this paper suggests how to update components with newly implemented one without terminating tbe running software wbicb is cmnposed witb tbe component for tbe purpose of solving problems which are occurred wben existing components are being ubdated.

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The Effect of Technology-Based Entrepreneurship(TBE) Activities on Firms Growth (기술기반창업기업의 기업활동이 기업성장에 미치는 영향)

  • Lee, Myung-Jong;Joo, Youngjn
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.14 no.6
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    • pp.59-76
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    • 2019
  • Most technology-based entrepreneurship(TBE) go through an process of decline or disappear without overcoming the valley of death(VoD). The purpose of this study is to identify the growth dimension of TBE and to test the influence of firms activities on firms growth over time. This study identified the two-dimensional growth dimension divided by size and profit through exploratory factor analysis(EFA) of a number of growth indicators. Then, we defined the discrete state of growth firm in four states, divided by size and profit, and five states, including the closure of business. Multi-nomial logit model is used to predict the effect of TBE activities on a discrete state of growth firm(size×profit, closure of business) based on multiple independent variables. The independent variables are based on five representative firms activities: employment, marketing, R&D, financial activities, and general management activities. The growth stage of TBE over time has been categorized into three stages: early stage, middle stage, and late stage of business, taking into account the main periods during which the survival rate of startups sharply decreases. The analytical data of this study was based on the secondary data of the start-up supporting companies of government and public institutions. The subjects of analysis were TBE within 10 years. As a result of the empirical analysis, the employment and marketing activities of TBE show that early and mid-term activities had an effect on the state of firms growth. However, if there is a difference, employment activities have both positive and negative effects, while marketing activities have only a positive effect on size and profit growth. And besides, R&D activities, financial activities, and general management activities throughout the entire process of firms growth were found to be firms activities that have both positive and negative effects on firms growth. In addition, the age of the founder, the firms' industry, and the geographic location of the firms, which are general characteristics of the company, were found to have a distinctive effect on the growth status of the firms according to the growth stage.

Thickness dependency of MAHONOS ($Metal/Al_2O_3/HfO_2/SiO_2/Si_3N_4/SiO_2/Si$) charge trap flash memory

  • O, Se-Man;Yu, Hui-Uk;Kim, Min-Su;Lee, Yeong-Hui;Jeong, Hong-Bae;Jo, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.34-34
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    • 2009
  • The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with $SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier, $HfO_2$ charge trap layer and $Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about $10^6$ times) (Erase: about $10^4$ times) but also enhanced retention and endurance characteristics are represented.

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Erasing characteristic improvement in SONOS type with engineered tunnel barrier (Engineered tunnel barrier를 갖는 SONOS 소자에서의 소거 속도 향상)

  • Park, Goon-Ho;You, Hee-Wook;Oh, Se-Man;Kim, Min-Soo;Jung, Jong-Wan;Lee, Young-Hie;Chung, Hong-Bay;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.97-98
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    • 2009
  • Tunneling barrier engineered charge trap flash (TBE-CTF) memory capacitor were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectrics layers were used as engineered tunneling barrier. The charge trapping characteristic with different metal gates are also investigated. A larger memory window was achieved from the TBE-CTF memory with high workfunction metal gate.

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Electrical Characteristics of Staggered Capacitor ($Si_3N_4$ / HfAlO) for High Performance of Non-volatile Memory

  • Lee, Se-Won;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.358-358
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    • 2010
  • To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on $Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer $SiO_2$ capacitor.

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