• Progress in Superconductivity
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• v.3 no.1
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• pp.87-90
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• 2001

We designed a high temperature superconducting rapid single flux quantum(RSFQ) T flip-flop(TFF) circuit using Xic and WRspice. According to the optimized circuit parameters, we fabricated the TFF circuit with $Y_1$$Ba_2$Cu$_3$$O_{7-x}$(YBCO) interface-controlled Josephson junctions. The whole circuit was comprised of five epitaxial layers including YBCO ground plane. The interface-controlled Josephson junction was fabricated with natural junction barrier that was formed by interface-treatment process. In addition, we report second design for a new flip-flop without ground palne.e.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.2
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• pp.1-7
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• 2012

LED package with 4[mm]-height mold was manufactured and the surface temperature was measured directly using both thermocouple and thermal infrared (IR) camera. FVM simulation was conducted to estimate the surface temperature of the same LED package under the same condition, by which the accuracy of the simulation was secured. Then, the effects of the height and thermal conductivity of the mold on the junction temperature of the LED package were investigated by FVM simulation. The results showed that the junction temperature decreased by 10[$^{\circ}C$] when the mold height was 3~5[mm], but the thermal conductivity of the mold didn't affect the junction temperature significantly.

• Current Photovoltaic Research
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• v.10 no.3
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• pp.84-89
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• 2022

c-Si solar cells currently account for more than 90% of the solar energy market. Research on tandem junction solar cells to overcome efficiency limitations is drawing attention at a time when new technologies are being developed to secure the price competitiveness of silicon solar cells. Among several candidate materials for silicon-based tandem solar cells, perovskite has recently been studied as it is suitable for the ease of process as well as for its properties as a tandem solar cell material. In this study, we want to review the research trends and technology limitations of 2-T Perovskite/SHJ tandem junction solar cells.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..

• Journal of Physiology & Pathology in Korean Medicine
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• v.31 no.3
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• pp.182-187
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• 2017

The purpose of the present study is a comparison of the antioxidant effects of Angelica gigas Korea (AG), Angelica sinensis of China (AS), and Angelica acutiloba of Japan (AA), and comparison of the effects of AG, AS and AA on tight-junction related genes in human keratinocyte HaCaT cells. All species showed a strong antioxidant effect, and AA was higher than AG and AS in antioxidant effects. The cytotoxicity was confirmed to be higher in AS than AG and AA at a concentration of $1,600{\mu}g/ml$ using the MTS assay in HaCaT cells. We analyzed the effects of AG, AS, and AA on mRNA expression levels of various tight-junction related genes in HaCaT cells. We found that no obvious changes in expression of Claudin 1, 3, 4, 6, 7, 8, Occludin, JAM-A, ZO-1, ZO-2, and tricellulin by treatment of all species, suggesting that there is less possibility of side effects and skin moisturizing effects due to changes in tight-junction gene expression. Our results suggest that AG, AS, and AA are thought to be effective in reducing the oxidative stress of the skin and preventing the aging of the skin.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.6B
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• pp.1123-1133
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• 1999

In this paper, we applied mode matching and generalized scattering matrix methods to three plane mode matching method for analyzing T-junctions. We calculated all scattering matrix elements by only three times and considered several incident modes. By proposed analysis method, we could analyze various waveguide discontinuity structures more conveniently and accurately. Using the stepped T-junction, we would be able to reduce the reflection coefficient at an input port and use it over wider band. Simulated and HFSS data of T-junctions are compared, showing good agreement for scattering matrix elements. Considering step numbers, height, length and position, we extracted for optimum dimensions and equivalent circuit parameters.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.223-228
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• 1999

We have investigated the microwave properties of a high-T$_c$. superconducting Josephson junction by Shapiro step measurements. A Josephson junction was fabricated on the bicrystal MgO substrate using pulsed laser deposition method. We have measured Shapiro steps in the I-V characteristics under the irradiation of 1.36 cm wavelength up to 45 K and found inclined current steps above 50 K. In order to understand these results, we introduced an additional resistance connected in series to RSJ model. Using this modified RSJ model, we could explain the inclined current steps as a result of superposition of the junction and an additional resistance above certain temperatures. Also, we presented the received power of the Josephson junction above 50 K.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.103.1-103
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• 1998

• Proceedings of the Korea Contents Association Conference
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• 2003.11a
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• pp.249-252
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• 2003

Scattering solutions of an H-plane T-junction in a parallel-plate waveguide are theoretically investigated. The iterative procedure and Green's function relation are used to obtain the iterative equations for the $E_{z}$ field modal coefficients, thus resulting in matrix solutions. The scattering characteristics of reflection and transmission powers are presented and compared with other existing results.s.