• Tribology and Lubricants
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• v.24 no.5
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• pp.255-263
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• 2008

Adhesion tests were conducted to investigate the adhesion characteristics between mold and thermoplastic polymer film. Coating of anti-sticking layer (ASL), a kind of polymer material, imprint pressure, and separation velocity were considered as the process conditions. A piece of fused silica without patterns on its surface was used as a mold and the thermoplastic polymer films were made on Si substrate by spin-coating the commercial polymer solution such as mr-I PMMA and mr-I 7020. The ASL was derived from (1H, 1H, 2H, 2H - perfluorooctyl) trichlorosilane($F_{13}$-OTS) and coated on the fused silica mold in vapor phase. The pull-off force was measured in various process conditions and the surfaces of the mold and the polymer film were observed after separation. It was found that the adhesion characteristics between the mold and the thermoplastic polymer film and the release performance of ASL were changed according to the process conditions. The ASL was effective to reduce the pull-off force and the damage of polymer film. In cases of the mold coated with ASL, the pull-off force did not depend on imprint pressure and separation velocity.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• The KIPS Transactions:PartB
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• v.10B no.7
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• pp.815-822
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• 2003

Fingerprint image enhancement and minutiae matching are two key steps in an automatic fingerprint identification system. In this paper, we propose a fingerprint recognition technique by using minutiae linking information. Recognition process have three steps ; preprocessing, minutiae extraction, matching step based on minutiae pairing. After extracting minutiae of a fingerprint from its thinned image for accuracy, we introduce matching process using minutiae linking information. Introduction of linking information into the minutiae matching process is a simple but accurate way, which solves the problem of reference minutiae pair selection with low cost in comparison stage of two fingerprints. This algorithm is invariable to translation and rotation of fingerprint. The matching algorithm was tested on 500 images from the semiconductor chip style scanner, experimental result revealed the false acceptance rate is decreased and genuine acceptance rate is increased than existing method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Applied Chemistry for Engineering
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• v.30 no.5
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• pp.523-529
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• 2019

In this study, we investigated the pretreatment technologies of volatile organic compounds (VOCs) which is a problem as the semiconductor and display industry develops recently. The conventional concentrator used in the direct combustion system, is easily contaminated by the exhaust gas in the manufacturing process of the display, resulting in the low treatment efficiency of generated VOCs. Physical/Chemical analyses of the exhaust gas showed high boiling point and viscosity in addition to a large amount of molecular weight alcohols and oil components. In this study, we tried to treat degrading materials by using the heat exchanger in a pretreatment facility and some materials degrading the concentrator were condensed more than 90%. In addition, it was also confirmed that an auxiliary device of the grease filter could remove the redispersion polymer oil from the heat exchanger.

• The Journal of Korean Institute of Information Technology
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• v.16 no.11
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• pp.23-34
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• 2018

This paper presents the high efficiency and high power-factor power supply for LED lighting equipment. The proposed power supply is the single-stage power structure consisted of the full-bridge diode rectifier and flyback converter, and thus the power-factor correction and output voltage regulation are performed simultaneously using only one controller IC and one power semiconductor switch. Furthermore, the proposed power supply reduces the voltage stress and switching loss of main switch using the regenerative snubber, and it improves the system efficiency using the synchronous rectifier. The applied synchronous rectifier is the new voltage-driven type and its operation and construction are simple. In this paper, the operation principle of proposed power supply is explained through the operation analyses of its power-factor correction and main power conversion parts and the operation of synchronous rectifier is described, briefly. Also, a design example of the power circuit of 40W-class prototype is shown and the operation characteristics of proposed power supply are validated through the experimental results of the implemented prototype by the designed circuit parameter.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.619-626
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• 2019

The advances of semiconductor and circuitry technology dovetailed with nano processing techniques have further enhanced micro-miniaturization, sensitivity, longevity and reliability in MID(Medical Implant Device). Nevertheless, one of the remaining challenges is whether power can sufficiently and continuously be supplied for the operation of the MID. Self-powered MID that harvest biomechanical energy from human motion, respiratory and muscle movement are part of a paradigm shift. In this paper, we developed a rechargeable pacemaker through self-power generation with the triboelectric nanogenerator. We demonstrate a fully implanted pacemaker based on an implantable triboelectric nanogenerator, which act as a storage as well as active movement on a large-animal(dog) scale. The self-power pacemaker harvested from animal motion is 2.47V, which is higher than the required pacemaker device sensing voltage(1.35V).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.12
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• pp.600-606
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• 2018

A class D fire or combustible metal fire is characterized by the presence of burning metals. Only certain metals or metal compounds are flammable, including sodium and lithium. General fire extinguishing agents, such as dry chemical powder, water-based fire extinguish agents, and carbon dioxide, cannot be used in class D fires. This is because these agents cause adverse reactions or are ineffective. In addition, the amount of usage of combustible metals is increasing due to continuous development of the semiconductor and fuel cell industries. Despite this, Korea does not have standards and laws related to combustible metal fires. This paper suggests directions of the class D fire management policies to reduce the class D fire risk and impact by analyzing the standards and laws related to class D fires and combustible metal fire cases. The factors to make laws on class D fire prevention and response systems, and management system of dry sand were determined. These results may be used to help reduce the risk of class D fires and improve the response abilities.

• Journal of IKEEE
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• v.24 no.4
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• pp.1058-1063
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• 2020

This paper proposes a 12-bit SAR A/D(Successive Approximation Register Analog-to-Digital) converter that operates at low power for bio-signal and sensor signal processing. The conventional SAR A/D converter utilized the reduction of the dynamic current, which resulted in reducing total power consumption. In order to solve the limitation of the sampling time due to charging/discharging of the capacitor for reducing dynamic current, the different sampling time on the C-DAC bit switch operation was applied to reduce the dynamic current. In addition, lowering the supply voltage of the digital block to 0.6V led to 70% reduction of the total power consumption of the proposed ADC. The proposed SAR A/D was implemented with CMOS 65nm process 1-poly 6-metal, operates with a supply voltage of 1.2V. The simulation results demonstrate that ENOB, DNL/INL, power consumption and FoM are 10.4 bits, ±0.5LSB./±1.2LSB, 31.2uW and 2.8fJ/step, respectively.