• Structural Engineering and Mechanics
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• v.72 no.1
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• pp.99-111
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• 2019

To investigate the seismic performance of long-span partially earth-anchored cable-stayed bridge, a super long-span partially earth-anchored cable-stayed bridge scheme with main span of 1400m is taken as example, structural response of the bridge under E1 seismic action is investigated numerically by the multimode seismic response spectrum and time-history analysis, seismic behavior and also the effect of structural geometric nonlinearity on the seismic responses of super long-span partially earth-anchored cable-stayed bridges are revealed. The seismic responses are also compared to those of a fully self-anchored cable-stayed bridge with the same main span. The effects of structural parameters including the earth-anchored girder length, the girder width, the girder depth, the tower height to span ratio, the inclination of earth-anchored cables, the installation of auxiliary piers in the side spans and the connection between tower and girder on the seismic responses of partially ground-anchored cable-stayed bridges are investigated, and their reasonable values are also discussed in combination with static performance and structural stability. The results show that the horizontal seismic excitation produces significant seismic responses of the girder and tower, the seismic responses of the towers are greater than those of the girder, and thus the tower becomes the key structural member of seismic design, and more attentions should be paid to seismic design of these sections including the tower bottom, the tower and girder at the junction of tower and girder, the girder at the auxiliary piers in side spans; structural geometric nonlinearity has significant influence on the seismic responses of the bridge, and thus the nonlinear time history analysis is proposed to predict the seismic responses of super long-span partially earth-anchored cable-stayed bridges; as compared to the fully self-anchored cable-stayed bridge with the same main span, several stay cables in the side spans are changed to be earth-anchored, structural stiffness and natural frequency are both increased, the seismic responses of the towers and the longitudinal displacement of the girder are significantly reduced, structural seismic performance is improved, and therefore the partially earth-anchored cable-stayed bridge provides an ideal structural solution for super long-span cable-stayed bridges with kilometer-scale main span; under the case that the ratio of earth-anchored girder length to span is about 0.3, the wider and higher girder is employed, the tower height-to-span ratio is about 0.2, the larger inclination is set for the earth-anchored cables, 1 to 2 auxiliary piers are installed in each of the side spans and the fully floating system is employed, better overall structural performance is achieved for long-span partially earth-anchored cable-stayed bridges.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.125-130
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• 2009

This paper reviews the characteristics technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Journal of the Korean Magnetics Society
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• v.20 no.4
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• pp.129-133
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• 2010

Two-layered ferromagnetic alloy films (NiFe, CoFe) with a Conetic (NiFeCuMo) intermediately soft magnetic layer of different thickness were investigated to correlate the coercivity values and magnetization process with the strength of saturation field of hard axis. Thickness dependence of the $H_{EC}$ (coercivity of easy axis), $H_{HS}$ (saturation field of hard axis.), and X (susceptibility) of NiFe and NiFeCuMo thin films for the glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared by the ion beam deposition method was measured. The magnetic properties $H_{EC}$, $H_{HS}$, and X of two-layered ferromagnetic CoFe, NiFe films with a NiFeCuMo intermediately super-soft magnetic layer were strongly depended on the thickness of NiFeCuMo layer. The value of the coercivity and magnetic susceptibility of the NiFeCuMo film decreased by 25% and doubled relative to that of the NiFe film.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Restorative Dentistry and Endodontics
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• v.19 no.2
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• pp.641-654
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• 1994

This study was executed to evaluate adaptability of dentin bonding agents to dentinal wall with measuring contraction gap on interface between cavity wall and composite resin by SEM study. 6 kinds of dentin bonding agents were investigated for this study : Gluma, Super Bond C & B, All bond 2, Scotchbond multipurpose, Scotchbond 2 and Clearfil photo bond. 30 of fresh extracted teeth were randomly selected and divided into 6 groups with each 5. The round shaped cavities with 3mm dia. and 1.5mm depth were prepared on cementoenamel junction of buccal surface of teeth. Dentin bonding agents were applied to cavity wall and then the composite resin was filled in the cavity. Specimens were sectioned longitudinally on buccal surface. Sectioned aspects of specimens were impressioned with rubber base materials and finally precise replica were made of epoxy resin poured in negative impression. Contraction gaps were examined on interface between cavity wall and composite resin under condition of 200 and 2000 magnification of SEM. The results were as follows. 1. There were no gap on interface between enamel and composite resin in all specimens, but gaps were mainly exhibited on apical side of lateral wall of dentin of cavity. 2. In Gluma, 2 cases of 5 specimens exhibited excellent adaptation to the cavity wall, indicating no gaps on interface between cavity wall and composite resin. The other specimens showed gaps with range of $0{\sim}15{\mu}m$ width. 3. In Super Bond C & B, gaps with range of $0{\sim}10{\mu}m$ width were mainly exhibited on apical side of lateral wall of dentin of cavity. 4. In All bond 2, all specimens showed the most exellent adaptation to cavity wall when compared to the other materials, indicating no gap interface between cavity wall and composite resin. 5. In Scotchbond multipurpose, gaps with range of $0{\sim}10{\mu}m$ width were locally located on cavity wall. 6. In Scotchbond 2, all specimens showed great amount of gap with range of $5{\sim}25{\mu}m$, indicating the worst adaptation to cavity wall compared to the other materials. 7. In Clearfil photo bond, 2 case of 5 specimens exhibited exellent adaptation to cavity wall, indicating no gap. the other specimens showed gap with range of $0{\sim}15{\mu}m$ width on inferface between cavity wall and composite resin.