Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of 4H-SiC Superjunction Accumulation MOSFETs by Adjustment of the Thickness and Doping Level of the p-Pillar Region

p-Pillar 영역의 두께와 농도에 따른 4H-SiC 기반 Superjunction Accumulation MOSFET 소자 구조의 최적화

  • Jeong, Young-Seok (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 정영석 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2014.07.29
  • Accepted : 2015.09.18
  • Published : 2017.06.01
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Abstract

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

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References

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