• Journal of IKEEE
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• v.25 no.2
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• pp.356-361
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• 2021

Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.

• Journal of IKEEE
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• v.23 no.3
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• pp.756-761
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• 2019

In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.72-75
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• 2006

A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.496-500
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• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• Journal of IKEEE
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• v.25 no.2
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• pp.344-349
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• 2021

This paper proposes a structure in which Trench SiO₂ is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO₂ after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.

• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.