• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.37.2-37
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.461-464
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• 1999

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.372-376
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• 2018

The effects of off-state bias stress on the characteristics of p-type poly-Si TFT were investigated. To reduce the gate-induced drain leakage (GIDL) current, the off-state bias stress was changed by varying Vgs and Vds. After application of the off-state bias stress, the Vgs causing GIDL current was dramatically increased from 1 to 10 V, and thus, the Vgs margin to turn off the TFT was improved. The on-current and subthreshold swing in the aged TFT was maintained. We performed a technology computer-aided design (TCAD) simulation to describe the aged characteristics. The aged-transfer characteristics were well described by the local charge trapping. The activation energy of the GIDL current was measured for the pristine and aged characteristics. The reduced GIDL current was mainly a thermionic field-emission current.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.164-169
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• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• Molecules and Cells
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• v.39 no.6
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• pp.477-483
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• 2016

Heat shock factors (Hsfs) are central regulators of abiotic stress responses, especially heat stress responses, in plants. In the current study, we characterized the activity of the Hsf gene HsfA3 in Arabidopsis under oxidative stress conditions. HsfA3 transcription in seedlings was induced by reactive oxygen species (ROS), exogenous hydrogen peroxide ($H_2O_2$), and an endogenous $H_2O_2$ propagator, 2,5-dibromo-3-methyl-6-isopropyl-p-benzoquinone (DBMIB). HsfA3-overexpressing transgenic plants exhibited increased oxidative stress tolerance compared to untransformed wild-type plants (WT), as revealed by changes in fresh weight, chlorophyll fluorescence, and ion leakage under light conditions. The expression of several genes encoding galactinol synthase (GolS), a key enzyme in the biosynthesis of raffinose family oligosaccharides (RFOs), which function as antioxidants in plant cells, was induced in HsfA3 overexpressors. In addition, galactinol levels were higher in HsfA3 overexpressors than in WT under unstressed conditions. In transient transactivation assays using Arabidopsis leaf protoplasts, HsfA3 activated the transcription of a reporter gene driven by the GolS1 or GolS2 promoter. Electrophoretic mobility shift assays showed that GolS1 and GolS2 are directly regulated by HsfA3. Taken together, these findings provide evidence that GolS1 and GolS2 are directly regulated by HsfA3 and that GolS enzymes play an important role in improving oxidative stress tolerance by increasing galactinol biosynthesis in Arabidopsis.

• Biomolecules & Therapeutics
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• v.32 no.3
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• pp.349-360
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• 2024

Oxidative stress contributes to the onset of chronic diseases in various organs, including muscles. Morroniside, a type of iridoid glycoside contained in Cornus officinalis, is reported to have advantages as a natural compound that prevents various diseases. However, the question of whether this phytochemical exerts any inhibitory effect against oxidative stress in muscle cells has not been well reported. Therefore, the current study aimed to evaluate whether morroniside can protect against oxidative damage induced by hydrogen peroxide (H₂O₂) in murine C2C12 myoblasts. Our results demonstrate that morroniside pretreatment was able to inhibit cytotoxicity while suppressing H₂O₂-induced DNA damage and apoptosis. Morroniside also significantly improved the antioxidant capacity in H₂O₂-challenged C2C12 cells by blocking the production of cellular reactive oxygen species and mitochondrial superoxide and increasing glutathione production. In addition, H₂O₂-induced mitochondrial damage and endoplasmic reticulum (ER) stress were effectively attenuated by morroniside pretreatment, inhibiting cytoplasmic leakage of cytochrome c and expression of ER stress-related proteins. Furthermore, morroniside neutralized H₂O₂-mediated calcium (Ca²⁺) overload in mitochondria and mitigated the expression of calpains, cytosolic Ca²⁺-dependent proteases. Collectively, these findings demonstrate that morroniside protected against mitochondrial impairment and Ca²⁺-mediated ER stress by minimizing oxidative stress, thereby inhibiting H₂O₂-induced cytotoxicity in C2C12 myoblasts.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.327.1-327.1
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• 2016

모바일 기기의 폭발적 증가세로 인해 플래시 메모리의 수요가 증가하고 있다. 낸드 플래시 메모리는 적은 전력 소모량과 높은 전기적 효율 때문에 많은 많은 연구가 이루어지고 있다. 반면에 stress-induced leakage current, positive-charge-assisted tunneling, thermally-assisted tunneling 등의 문제로 신뢰성이 저하되는 문제가 발생한다. 프로그램/이레이즈 동작이 반복되면 소자에서 발생하는 에러의 발생비율이 늘어나 신뢰성이 저하되게 된다. 비록 신뢰성 저하 메커니즘에 대한 연구가 많이 이루어졌으나, 워드라인 스트레스에 의한 프로그램 특성 저하에 대한 구체적인 연구가 진행되지 않았다. 본 연구에서는 플래시 메모리의 워드라인 스트레스로 인한 전기적 특성 감소 현상을 보기 위해, 플로팅 게이트의 두께를 변화시키면서, electron density와 depletion region 의 변화를 관찰하였다. 낸드 플래시 메모리의 전기적 특성을 멀티 오리엔테이션 모델을 포함한 3차원 TCAD 시뮬레이션을 이용하여 계산하였다. 프로그램/이레이즈 동작이 증가함에 따라, 플로팅 게이트에 공핍영역이 생기고, 블로킹 옥사이드와 게이트 사이에 의도하지 않은 트랩이 생기게 된다. 이로 인해 프로그램/이레이즈 동작이 증가함에 따라, 플로팅 게이트의 electron density가 감소하는 경향을 보았다. 이 연구 결과는 낸드 플래시 메모리 소자에서 신뢰성을 향상시키고 프로그램 특성을 증진시키는데 도움이 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.201-201
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• 2001